Low-noise characteristics of pulse-doped GaAs MESFETs with planar self-aligned gates

Nakajima, Shigeru; Otobe, K.; Shiga, N.; Kuwata, N.; Matsuzaki, K.; Sekiguchi, Toyokazu; Hayashi, Hideki

doi:10.1109/16.127464

Cited by 14 publications

(2 citation statements)

References 25 publications

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“…In particular, highfrequency FETs using GaN/AIGaN heterostructures have been realized using uniformly Si doped layers. In Ill-V compound semiconductors such as GaAs, FETs with characteristics superior to those of conventionally doped transistors have been fabricated using the delta-doping technique [6], which can achieve very narrow doping distribution along the epitaxial growth direction and up to now has been studied in a variety of materials and devices [7][8][9]. It was recently demonstrated that the inclusion of delta doping could improve laser stability in the face of temperature variations, in comparison with conventional quantum well lasers [10].…”

Section: Introductionmentioning

confidence: 99%

Si Delta Doped GaN Grown by Low-Pressure Metalorganic Chemical Vapor Deposition

et al. 1998

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Si delta-doping in the GaN layer has been successfully demonstrated by low-pressure metalorganic chemical vapor deposition at a growth temperature of 1040 TC. Si delta-doping concentration increases and then decreases with an increase in delta-doping time. This indicates that delta-doping concentration is limited by the desorption process owing to much higher thermal decomposition efficiency of silane at high growth temperatures of GaN. In addition, it was observed that the use of a post-purge step in the ammonia ambient reduces Si delta-doping concentration. From capacitance-voltage measurement, a sharp carrier concentration profile with a full-width at half maximum of 4.

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Section: Introductionmentioning

confidence: 99%

Si Delta Doped GaN Grown by Low-Pressure Metalorganic Chemical Vapor Deposition

et al. 1998

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“…In particular, high-frequency FETs using GaN/AlGaN heterostructures have been realized using uniformly Si doped layers. In III-V compound semiconductors such as GaAs, FETs with characteristics superior to those of conventionally doped transistors have been fabricated using the delta-doping technique [6], which can achieve very narrow doping distribution along the epitaxial growth direction and up to now has been studied in a variety of materials and devices [7][8][9]. It was recently demonstrated that the inclusion of delta doping could improve laser stability in the face of temperature variations, in comparison with conventional quantum well lasers [10].…”

Section: Introductionmentioning

confidence: 99%

Si Delta Doped GaN Grown by Low-Pressure Metalorganic Chemical Vapor Deposition

Kim

Yang

Choi

et al. 1999

MRS Internet j. nitride semicond. res.

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Si delta-doping in the GaN layer has been successfully demonstrated by low-pressure metalorganic chemical vapor deposition at a growth temperature of 1040 . Si delta-doping concentration increases and then decreases with an increase in delta-doping time. This indicates that delta-doping concentration is limited by the desorption process owing to much higher thermal decomposition efficiency of silane at high growth temperatures of GaN. In addition, it was observed that the use of a post-purge step in the ammonia ambient reduces Si delta-doping concentration. From capacitance-voltage measurement, a sharp carrier concentration profile with a full-width at half maximum of 4

show abstract

Recent progress in δ-doping of III–V semiconductors grown by metal organic vapour phase epitaxy

Jagadish

1997

Solid-State Electronics

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Low-noise characteristics of pulse-doped GaAs MESFETs with planar self-aligned gates

Cited by 14 publications

References 25 publications

Si Delta Doped GaN Grown by Low-Pressure Metalorganic Chemical Vapor Deposition

Si Delta Doped GaN Grown by Low-Pressure Metalorganic Chemical Vapor Deposition

Si Delta Doped GaN Grown by Low-Pressure Metalorganic Chemical Vapor Deposition

Recent progress in δ-doping of III–V semiconductors grown by metal organic vapour phase epitaxy

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