Low Noise Amplifier at Ka Band

Garg, Divya Kumar; Kumar, Vijay; Kumar, M. Madhava; Verma, Yogesh Kumar; Chaturvedi, Sandeep

doi:10.1109/imarc.2017.8449723

Cited by 2 publications

(4 citation statements)

References 1 publication

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“…These transmission lines were synthesized and EM (electromagnetically) simulated using the Momentum tool (version 6). The EM simulation was carried out on an overall two-stage LNA layout excluding the transistors, resistors, and MIM capacitors, and an EM model was generated [7]. The EM layout model is shown in Figure 11.…”

Section: Resultsmentioning

confidence: 99%

“…The presented LNA exhibited the lowest noise figure and lowest power consumption in comparison to all previ-ously published values. Two Figures of Merit (FoM) were defined in [6][7][8], to evaluate the performances among the wideband LNAs and are calculated using Equations ( 7) and (8). The input third-order intercept (I IP 3 ) of the presented LNA resulted to be −4.2 dBm.…”

Section: Resultsmentioning

confidence: 99%

“…The methodology to reduce the base resistance and select the optimum transistor size is discussed in the following section. The presented LNA can be used to support applications falling under Ka-band, millimeter-wave receivers, and 5G communication systems [6][7][8][9][10]. The proposed LNA reports the lowest noise figure, lowest power consumption with reasonable highest gain, and highest bandwidth realized so far at this frequency band in any silicon-based technology.…”

Section: Introductionmentioning

confidence: 97%

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A 20–44 GHz Wideband LNA Design Using the SiGe Technology for 5G Millimeter-Wave Applications

et al. 2021

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This paper presents the design and implementation of a low-noise amplifier (LNA) for millimeter-wave (mm-Wave) 5G wireless applications. The LNA was based on a common-emitter configuration with cascode amplifier topology using an IHP’s 0.13 μm Silicon Germanium (SiGe) heterojunction bipolar transistor (HBT) whose f_T/f_MAX/gate-delay is 360/450 GHz/2.0 ps, utilizing transmission lines for simultaneous noise and input matching. A noise figure of 3.02–3.4 dB was obtained for the entire wide bandwidth from 20 to 44 GHz. The designed LNA exhibited a gain (S_21) greater than 20 dB across the 20–44 GHz frequency range and dissipated 9.6 mW power from a 1.2 V supply. The input reflection coefficient (S_11) and output reflection coefficient (S_22) were below −10 dB, and reverse isolation (S_12) was below −55 dB for the 20–44 GHz frequency band. The input 1 dB (P1dB) compression point of −18 dBm at 34.5 GHz was obtained. The proposed LNA occupies only a 0.715 mm2 area, with input and output RF (Radio Frequency) bond pads. To the authors’ knowledge, this work evidences the lowest noise figure, lowest power consumption with reasonable highest gain, and highest bandwidth attained so far at this frequency band in any silicon-based technology.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 97%

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A 20–44 GHz Wideband LNA Design Using the SiGe Technology for 5G Millimeter-Wave Applications

et al. 2021

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“…To improve the input matching and boost gain, a capacitor has been added to the base-collector notch filter. In [8] uses a two-stage single-ended cascode LNA with an inductive source degeneration topology. Since this method adopts a transistor that operates in the saturation region at the very end, the input matching and noise performance of the LNA is low.…”

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confidence: 99%

Analysis of Three-Stage LNA Architecture for CMOS RF Front End

Sathya¹,

Ambulker²

2023

J. Phys.: Conf. Ser.

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Wireless communication continues to lead the world. The term “wireless” significantly influences everything from telephone to satellite communication. Recent years have seen the need for appropriately built Low Noise Amplifiers (LNAs) in receiver front end because of the modem wireless communication in broadcast and microwave radio. In this paper a high performance LNA for the radio frequency range is presented. To achieve high gain a three stage LNA with each stage as Cascode stage is considered here. The simulation shows that the presented LNA has a gain of 26.12 dB and a Noise Figure (NF) of 2.6 dB. The achieved output and input returns losses are -8.4 dB and -11.6 dB respectively.

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Low Noise Amplifier at Ka Band

Cited by 2 publications

References 1 publication

A 20–44 GHz Wideband LNA Design Using the SiGe Technology for 5G Millimeter-Wave Applications

A 20–44 GHz Wideband LNA Design Using the SiGe Technology for 5G Millimeter-Wave Applications

Analysis of Three-Stage LNA Architecture for CMOS RF Front End

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