2018
DOI: 10.1063/1.5017583
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Low noise 874 GHz receivers for the International Submillimetre Airborne Radiometer (ISMAR)

Abstract: We report on the development of two 874 GHz receiver channels with orthogonal polarizations for the International Submillimetre Airborne Radiometer. A spline horn antenna and dielectric lens, a Schottky diode mixer circuit, and an intermediate frequency (IF) low noise amplifier circuit were integrated in the same metallic split block housing. This resulted in a receiver mean double sideband (DSB) noise temperature of 3300 K (minimum 2770 K, maximum 3400 K), achieved at an operation temperature of 40 °C and acr… Show more

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Cited by 7 publications
(4 citation statements)
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“…So far the only other two passive sensors that carry a 874-883 GHz channel are ESA's airborne International SubMillimeter Airborne Radiometer (ISMAR) and NASA's airborne Compact Scanning Submillimeter-wave Imaging Radiometer (CoSSIR). ISMAR only added the 874 GHz channel in recent flights, so data are not publicly available at this moment (Hammar et al, 2018;Fox, 2020). CoSSIR channel frequencies range from 183 ± 1, ±3, ±7 GHz (water vapor profiling), 220, 380±1, ±2, ±3, ±6 GHz (temperature profiling) and 640 GHz vertically polarized and horizontally polarized pairs to 874 GHz.…”
Section: Comparison Against Other Observationsmentioning
confidence: 99%
“…So far the only other two passive sensors that carry a 874-883 GHz channel are ESA's airborne International SubMillimeter Airborne Radiometer (ISMAR) and NASA's airborne Compact Scanning Submillimeter-wave Imaging Radiometer (CoSSIR). ISMAR only added the 874 GHz channel in recent flights, so data are not publicly available at this moment (Hammar et al, 2018;Fox, 2020). CoSSIR channel frequencies range from 183 ± 1, ±3, ±7 GHz (water vapor profiling), 220, 380±1, ±2, ±3, ±6 GHz (temperature profiling) and 640 GHz vertically polarized and horizontally polarized pairs to 874 GHz.…”
Section: Comparison Against Other Observationsmentioning
confidence: 99%
“…Using silicon-integrated technologies at terahertz (THz) frequencies therefore becomes challenging due to the absence of practical transistor gain above f max /2, currently only demonstrated at 1 THz using a III-V InP high electron mobility transistor with f max of 1.5 THz [6]. Nevertheless, state-of-the-art terahertz designs are commonly implemented using bulky split-block designs incorporating III-V Schottky diodes which show excellent receiver noise temperatures of around 3000 K at 0.85 THz [7], 0.874 THz [8] and 1.134 THz [9]. Similarly, an output power of around 2 mW has been achieved using a Schottky diode frequency tripler at 1.03 THz [10].…”
Section: Introductionmentioning
confidence: 99%
“…So, it is urgent to design biased sub-harmonic mixers to reduce the requirement for LO power. At present, biased sub-harmonic mixers working at 585 GHz [13], 874 GHz [14,15], 1.2 THz [16,17], and 1.2 THz [18] are designed and reported based on advanced GaAs membrane film process or frameless architecture. The biased mixers mentioned above are all based on monolithic integration technology, where the on-chip capacitor is required.…”
Section: Introductionmentioning
confidence: 99%