Low noise 80?115 GHz quasiparticle mixer with small Nb/Al-Oxide/Nb tunnel junctions

Feautrier, P.; Blondel, J.; Hanus, M.; Chenu, J.-Y.; Encrenaz, P.; Carter, M.

doi:10.1007/bf01010515

Cited by 4 publications

(2 citation statements)

References 19 publications

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“…However, generally such techniques are unsuitable for small area junctions unless unusual techniques are used that can realize submicron alignment [1], [2]. This general restriction for machined aligned techniques to junction diameters greater than several microns is not Manuscript [6]. In such a process, the etch of the junction also effectively defines the junction insulation.…”

Section: Introductionmentioning

confidence: 96%

Pentalevel Resist Process for the Precise Fabrication of Small Area SIS Junctions

Lichtenberger

Stronko

Wang

et al. 2009

IEEE Trans. Appl. Supercond.

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We have fabricated high quality M1/barrier/M2/Au superconducting insulating superconducting (SIS) junctions with Au over-layers using a new multilayer pentalevel resist process. The wafer NFR polyimide SiO 2 Cr imaging resist pentalevel structure enables precise definition of submicron junction features in a self-aligned insulation process. This scheme, unlike our previous multilevel resists, affords precise definition of the final Nb layer from an initial etch of a thinner top Cr layer. The Cr layer, defined with chlorine based RIE, serves as an excellent mask for the subsequent fluorine and oxygen based RIE etches of the remaining pentalevel stack and M2 electrode. We present a detailed description of the pentalevel process and electrical characteristics of NbTiN SIS junctions fabricated with this new technique.

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Section: Introductionmentioning

confidence: 96%

Pentalevel Resist Process for the Precise Fabrication of Small Area SIS Junctions

Lichtenberger

Stronko

Wang

et al. 2009

IEEE Trans. Appl. Supercond.

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“…The fabrication of small Nb/AI-AIOflb junctions (about 1 pm2) is based on the 'selective niobium etching process' (SNEP), first developed by Gurvitch et a/ [I, 21, improved by Yuda et a/ [3] and also described in a previous paper by Feautrier et a/ [4]. To obtain junctions working at 380 GHz for radioastronomy, it is essential to use a thin quartz substrate to limit RF losses, to have current densities above lo4 A cm-' and submicron areas.…”

Section: Introductionmentioning

confidence: 99%

Nb/Al-AlO_x/Nb junctions for a 380 GHz SIS receiver

Feautrier

Hanus

Febvre

1992

Supercond. Sci. Technol.

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To optimize this process, it has been useful to carry out several studies. We found that it was necessary to heat sink the quartz substrate during all trilayer fabrication steps. Anodization spectroscopy and RIE etching have been used to verity the quality of the tunnel barrier which is directly correlated with the I-V characteristics. An oxygen plasma is used to reduce the resist diameter and thus to expose the junction perimeter to the Si0 layer, so as to obtain small junction areas with small leakage currents. The first results obtained with these junctions integrated in a 380 GHz receiver are promising: the DSB receiver noise temperature is 310 K a t 374 GHz with a mixer noise temperature of about 155 K.

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Some recent developments in the design of SIS mixers

Kerr

Pan

1990

Int J Infrared Milli Waves

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Low noise 80?115 GHz quasiparticle mixer with small Nb/Al-Oxide/Nb tunnel junctions

Cited by 4 publications

References 19 publications

Pentalevel Resist Process for the Precise Fabrication of Small Area SIS Junctions

Pentalevel Resist Process for the Precise Fabrication of Small Area SIS Junctions

Nb/Al-AlO_x/Nb junctions for a 380 GHz SIS receiver

Some recent developments in the design of SIS mixers

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Low noise 80?115 GHz quasiparticle mixer with small Nb/Al-Oxide/Nb tunnel junctions

Cited by 4 publications

References 19 publications

Pentalevel Resist Process for the Precise Fabrication of Small Area SIS Junctions

Pentalevel Resist Process for the Precise Fabrication of Small Area SIS Junctions

Nb/Al-AlOx/Nb junctions for a 380 GHz SIS receiver

Some recent developments in the design of SIS mixers

Contact Info

Product

Resources

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Nb/Al-AlO_x/Nb junctions for a 380 GHz SIS receiver