Abstract:A Si/SiO2/CuPt structure is formed by depositing a very thin SiO2 layer between CuPt and P-type Si layers using e-beam evaporation. SEM images show the formation of CuPt nano clusters with an average size of less than 100 nm. This structure shows high sensitivity to applied magnetic fields at 77K and at low and high dc voltages such that magnetic field as low as 6 mT is detected using I-V and I–B measurements. The variation of current with various magnetic field strength at the constant voltage shows also an o… Show more
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