Low-loss Silicon Oxynitride Waveguides and Branches for the 850-nm-Wavelength Region

Tsuchizawa, Tai; Watanabe, T.; Yamada, Koji; Fukuda, Hiroshi; Itabashi, S.; Fujikata, Junichi; Gomyo, Akiko; Ushida, Jun; Okamoto, Daisuke; Nishi, Kenichi; Ohashi, Keisuke

doi:10.1143/jjap.47.6739

Cited by 17 publications

(12 citation statements)

References 14 publications

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“…However, no significant difference in propagation losses for W=900 nm and W=1000 nm has been observed, therefore both widths may be suitable for the circuit design. The values of propagation losses in our waveguides are comparable with recent reports on SiON waveguides operating at SW-NIR: in [28] the losses of 0.3 dB/cm were demonstrated for a waveguide with a core n of 1.515 and a cross-section of 1.1 µm × 2.2 µm. The values of bending losses in the 100 µm-curve obtained in this experiment confirm the measurements on multiply bent structures, presented in the previous section.…”

Section: B Propagation Lossessupporting

confidence: 90%

A SiON Microring Resonator-Based Platform for Biosensing at 850 nm

Samusenko

Gandolfi²,

Pucker

et al. 2016

J. Lightwave Technol.

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In this paper we report on the design, fabrication and characterization of a photonic circuit for biosensing applications. Silicon oxynitride with a bulk refractive index of 1.66 is the core-layer material. The photonic circuit is optimized for a wavelength of ~850 nm, which allows on-chip integration of the light source via cost effective vertical-cavity surface-emitting lasers and of the detector by using standard silicon photodetectors. Design as well as fabrication processes are explained in details. The best characteristics for the single optical components in the photonic circuit are: for single-mode channel waveguides with dimensions of 350 nm × 950 nm; propagation losses of 0.8 dB/cm; bending losses of 0.1 dB/90 0 -bend (radius of curvature 100 µm); 49/51 splitting ratio for 3-dB power splitters (directional couplers); quality factors up to 1.3×10 5 for microring resonators. Volumetric sensing yields a bulk sensitivity of 80 nm/RIU and a limit of detection of 3×10 -6 RIU. Therefore, SiONbased photonic circuits represent a reliable material platform for biosensing in the short-wave near infrared region.

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Section: B Propagation Lossessupporting

confidence: 90%

A SiON Microring Resonator-Based Platform for Biosensing at 850 nm

Samusenko

Gandolfi²,

Pucker

et al. 2016

J. Lightwave Technol.

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“…That is to say the resist reflow process is also applicable to non-Si waveguides such as SiN 14 and SiON. 15 Finally, it should be emphasized that for this process, there is no need for high temperature annealing to fit in the back-end processing, which would be a benefit for operation.…”

Section: Resultsmentioning

confidence: 99%

Silicon Waveguide Sidewall Smoothing by Resist Reflowing

Cai

Lim

Ishikawa

et al. 2010

J. Nonlinear Optic. Phys. Mat.

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We present a chip-upending method to reflow the resist and reduce the line edge roughness of submicron single mode waveguide. The resist expansion effect was studied and it was found that the expansion could be suppressed by using the chip-upending method while reflowing the resist. The line edge roughness was estimated to be reduced from ∼8 nm to ∼6 nm by theoretical calculation. Optical transmission measurements also demonstrated that the sidewall roughness can be smoothed. This kind of reflow process is operated at low temperature and is adaptable for different resists and it could be available for various waveguide materials as well.

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“…The core is made of SiON, and the cladding layer is made of SiO 2 . The refractive index contrast between SiON core and SiO 2 cladding was about 3%, and the core was 2.2-Pm wide and 1.1-Pm high [7,8]. The waveguide design is based on single-mode propagation at a wavelength of 850 nm [7].…”

Section: Application To On-chip Optical Clock Distributionmentioning

confidence: 99%

“…2 both for transverse electric (TE) and transverse magnetic (TM) polarization light of 850-nm wavelength. A high-accuracy 3-dB branch of a multi-mode interference (MMI) structure was also developed for optical clock distribution [8]. The MMI branch consists of a simple rectangle of about 130-Pm length and 10-Pm width with three waveguide ports [8].…”

Section: Application To On-chip Optical Clock Distributionmentioning

confidence: 99%

Waveguide-integrated Si nano-photodiode with surface-plasmon antenna and its application to on-chip optical clock signal distribution

Fujikata

Nose

Ushida

et al. 2008

2008 5th IEEE International Conference on Group IV Photonics

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We developed a waveguide-integrated Si nano-photodiode (PD) with a surface plasmon (SP) antenna for on-chip optical clock distribution. The interfacial periodic nano-scale metal-semiconductor-metal Schottky electrodes were shown to function as an SP optical antenna and also as an optical coupler between a SiON waveguide and a very thin Si-absorption layer. Furthermore, a very high speed response of 17 ps as well as enhanced photoresponsivity was achieved for a 10-P Pm coupling length. By using this technology, we fabricated a prototype of a large-scale-integration (LSI) on-chip optical clock system and demonstrated 5 GHz of optical clock circuit operation connected with a 4-branching H-tree structure. . INTRODUCTIONAs the scaling of complementary metal oxide semiconductor (CMOS) technology proceeds, it will become increasingly difficult for conventional copper interconnects to satisfy the design requirements of delay, power, bandwidth, and noise [1]. An on-chip optical interconnect with Si photonics is one of the more promising technologies for overcoming these difficulties in future high-performance computing [2,3]. A waveguide-integrated photodiode (PD) with an ultrawide-band and a small footprint is one of its key components. A Si PD has potential compatibility with CMOS technology, but its quantum efficiency is known to be much smaller at wavelengths of 700-900 nm than that of widely used GaAs PDs, which results in a much larger active volume. To overcome the trade-off between speed and responsivity, we have reported on an efficient light coupling and confinement architecture by using a surface plasmon (SP) resonance structure [4]. SP is essentially localized at the interface between a metal and a dielectric material, and the SP antenna is expected to achieve optical energy confinement as well as efficient light coupling between a waveguide and a Si absorption layer. As for waveguides to be coupled with a Si PD, silicon oxynitride (SiON) waveguides are very promising because of their controllability over a large range of refractive indices and their high transparency at wavelengths from 700 to 900 nm [5], where a Si PD has responsivity.In this paper, we report low-loss and high-accuracy 3-dB branching SiON waveguide properties on a Si platform, and an enhanced efficiency of a waveguide-integrated Si nano-PD with an SP antenna. We further report its application to a prototype on-chip optical clock distribution demonstration with a 4-branching H-tree structure.

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Low-loss Silicon Oxynitride Waveguides and Branches for the 850-nm-Wavelength Region

Cited by 17 publications

References 14 publications

A SiON Microring Resonator-Based Platform for Biosensing at 850 nm

A SiON Microring Resonator-Based Platform for Biosensing at 850 nm

Silicon Waveguide Sidewall Smoothing by Resist Reflowing

Waveguide-integrated Si nano-photodiode with surface-plasmon antenna and its application to on-chip optical clock signal distribution

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