Low-loss III-V semiconductor optical waveguides

Deri, R. J.; Kapon, E.

doi:10.1109/3.81372

Cited by 144 publications

(43 citation statements)

References 106 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…On the other hand, for bent plasmonic waveguides, all the modes are radiative as is the case for curved dielectric waveguides [31]. This significantly complicates the calculation since energy must now be allowed to escape from the computation window without being reflected back.…”

Section: Simulation Methodsmentioning

confidence: 99%

Simulation of complex plasmonic circuits including bends

Dellagiacoma¹,

Lasser²,

Martin³

et al. 2011

Opt. Express

View full text Add to dashboard Cite

Abstract:Using a finite-element, full-wave modeling approach, we present a flexible method of analyzing and simulating dielectric and plasmonic waveguide structures as well as their mode coupling. This method is applied to an integrated plasmonic circuit where a straight dielectric waveguide couples through a straight hybrid long-range plasmon waveguide to a uniformly bent hybrid one. The hybrid waveguide comprises a thin metal core embedded in a two-dimensional dielectric waveguide. The performance of such plasmonic circuits in terms of insertion losses is discussed.

show abstract

Section: Simulation Methodsmentioning

confidence: 99%

Simulation of complex plasmonic circuits including bends

Dellagiacoma¹,

Lasser²,

Martin³

et al. 2011

Opt. Express

View full text Add to dashboard Cite

show abstract

“…Waveguides are the optical equivalent of the copper wiring in electronic ICs. The performance parameters for waveguides are losses (including propagation losses, coupling losses and bending losses) [8], the number of guided modes that can be transported, and wavelength and polarization dependence. These parameters are determined by the properties (index contrast, absorption, quality) of the materials used, by the geometry of the waveguides, and the effects of processing on these.…”

Section: Passive Componentsmentioning

confidence: 99%

InP-based photonic circuits: Comparison of monolithic integration techniques

Tol

Oei

Khalique

et al. 2010

Progress in Quantum Electronics

View full text Add to dashboard Cite

“…[1][2][3] Photolithography and anisotropic dry-etching fabrication processes 4,5 transfer photo mask lineedge roughness and may introduce additional roughness to the etched sidewalls used to define the lateral effective index contrast, ⌬n eff , required to confine an optical mode. Theoretical and experimental studies of scattering loss ␣ ͑Refs.…”

Section: Reduction Of Etched Algaas Sidewall Roughness By Oxygen-enhamentioning

confidence: 99%

Reduction of etched AlGaAs sidewall roughness by oxygen-enhanced wet thermal oxidation

Liang

Hall

2007

Applied Physics Letters

View full text Add to dashboard Cite

The authors demonstrate that the oxidation smoothing of sidewall roughness of dry-etched Al0.3Ga0.7As ridge structures is enabled through a modified wet thermal oxidation process which involves the addition of dilute amounts of O2 to the water vapor ambient. High magnification cross-section and top-view scanning electron microscope imagings both before and after oxide removal clearly show a substantial reduction of photolithography- and dry-etching-induced sidewall roughness (from σ∼100nm down to σ∼1–2nm), occurring only with the participation of added O2. The smoothing process provides means to realize high-index-contrast GaAs-based optical waveguides with both low bend and scattering losses.

show abstract

Low-loss III-V semiconductor optical waveguides

Cited by 144 publications

References 106 publications

Simulation of complex plasmonic circuits including bends

Simulation of complex plasmonic circuits including bends

InP-based photonic circuits: Comparison of monolithic integration techniques

Reduction of etched AlGaAs sidewall roughness by oxygen-enhanced wet thermal oxidation

Contact Info

Product

Resources

About