Low-loss coupling of 980 nm GaAs laser to cleaved singlemode fibre

Verdiell, J.-M.; Ziari, M.; Welch, David

doi:10.1049/el:19961167

Cited by 16 publications

(4 citation statements)

References 7 publications

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“…Unfortunately, a decrease of the confinement factor is inevitably connected with a deterioration of the laser performance, such as threshold current, slope efficiency or maximum output power. In order to minimize this, several approaches were proposed in the literature [1][2][3][4]. Two major schemes can be distinguished: either a low-index layer is inserted into the confinement layer, or a high-index layer is inserted into the cladding layer.…”

Section: Introductionmentioning

confidence: 99%

High-power 808 nm lasers with a super-large optical cavity

Knauer

Erbert

Staske

et al. 2005

Semicond. Sci. Technol.

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We present a detailed design and experimental study of diode laser structures emitting at 808 nm based on the combination of a GaAsP quantum well with well-established AlGaAs waveguide structures. By increasing the thickness of the confinement layers of the laser structure, its vertical far field divergence is reduced down to 15 • with only a small increase of the threshold current and small loss of efficiency. 200 µm aperture 'broad area' devices achieve at a heat sink temperature of 25 • C a continuous wave (CW) output power of more than 15 W with a wall-plug efficiency of 50% with a vertical far field divergence of 18 • . This output power illustrates the excellent high-power performance by using super-large optical-cavity structures with improved beam characteristics in comparison to the conventional broad waveguide lasers.

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Section: Introductionmentioning

confidence: 99%

High-power 808 nm lasers with a super-large optical cavity

Knauer

Erbert

Staske

et al. 2005

Semicond. Sci. Technol.

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“…The passive waveguide ridge is configured as a dilute waveguide, embedding several layers of higher index InGaAsP within an InP waveguide [13][14][15]. The quaternary material chosen was Ino8Gao.…”

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confidence: 99%

An Operationally Responsive Space Architecture for 2025

Atkins¹,

Bass²,

Francis³

et al. 2008

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“…However, the technique is equally applicable to electroluminescence studies (where the signal strength is typically greater), including the spectroscopic measurement of near-and far-field patterns and the virtual sources of laser diodes. These investigations will be useful in the development of high-brightness laser diodes with superior beam quality for medical and fiber coupling applications [34], [35]. Nonlinear optical effects, such as spectral hole burning, can also be studied with S-ELM.…”

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confidence: 99%

A Spectroscopically Resolved Photo- and Electroluminescence Microscopy Technique for the Study of High-Power and High-Brightness Laser Diodes

Bull

Andrianov

Harrison

et al. 2005

IEEE Trans. Instrum. Meas.

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Abstract-A novel and advanced characterization technique is described for performing optical studies of the luminescence properties of materials. It was developed for the investigation of semiconductor materials, including semiconductor laser diodes and photonic integrated circuits. A quantitatively calibrated, spatially and spectrally resolved imaging technique is described, which is based upon the technologies of photoluminescence microscopy and photoluminescence spectroscopy. The principles of the spectroscopically resolved photo-and electroluminescence microscopy techniques are outlined in this paper, and the developed instrument is described in detail. Design calculations used to select and set up the experimental apparatus are presented, and results are found to compare well with this analysis. Various experimental measurements are used to demonstrate the performance of the new instrument. The study of strain and defects in high-power laser diodes is presented as one of the more challenging applications of the new technique. The results presented demonstrate the ability of this technique to image photoluminescence shifts occurring in the substrate of packaged laser bars, enabling the investigation of strain, defects and their evolution with aging. Other applications of the technique include the spectroscopic measurement of near-and far-field patterns and virtual sources of laser diodes, investigations of spectral hole burning and optical scattering processes in lasers and photonic integrated circuits, and studies of organic LEDs. In the future, applications are also envisaged in medicine and the biological sciences.Index Terms-Electroluminescence microscopy, high-brightness laser diodes, high-power laser diodes, photoluminescence microscopy, quantitative imaging, spectroscopic imaging.

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Low-loss coupling of 980 nm GaAs laser to cleaved singlemode fibre

Cited by 16 publications

References 7 publications

High-power 808 nm lasers with a super-large optical cavity

High-power 808 nm lasers with a super-large optical cavity

An Operationally Responsive Space Architecture for 2025

A Spectroscopically Resolved Photo- and Electroluminescence Microscopy Technique for the Study of High-Power and High-Brightness Laser Diodes

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