Low loss 67-GHz coplanar waveguides and spiral inductors on 100 k&amp;#x03A9;cm gold-doped high resistivity Cz-Silicon

Abuelgasim, A.; Hashim, Nur Zatil Ismah; Chong, H. Gin; Ashburn, P.; Groot, C.H. de

doi:10.1109/sirf.2014.6828514

Cited by 2 publications

(1 citation statement)

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“…Deep level compensation technique has showed its capabilities to improve the RF performances of the substrate by reducing attenuation from 0.8 dB/mm to 0.3 dB/mm [17], for CPW fabricated on gold doped silicon and standard silicon respectively. Resistivities arround 100 kΩ.cm have been reached for gold doped silicon substrate [18]. It was also shown that this technique can supress the PSC effects and eliminate the bias dependence [11], however the non-linearities of the gold-doped silicon substrate and its performances under large RF signal have not been reported in the literature yet.…”

Section: Introductionmentioning

confidence: 99%

Behavior of gold-doped silicon substrate under small- and large-RF signal

Nabet

Rack

Hashim

et al. 2020

Solid-State Electronics

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In this paper, small-and large-signal performances of passive devices integrated on high-resistivity, trap-rich and gold-doped silicon wafers are presented and compared through measurements and simulations. The gold-doped silicon substrate was produced starting from standard silicon having a nominal resistivity of 56 Ω.cm. We show that the gold-doped substrate presents high effective resistivity and low losses suitable for RF applications, this has been done by measuring coplanar waveguides, crosstalk, inductors and band pass filter where we saw a similar performances under small signal-measurements. Largesignal measurements of gold-doped substrates show 60 dBm lower harmonic distortion than high-resistivity substrates, and 10 dB lower than trap-rich substrate. A large DC bias dependence on the harmonic distortion induced by the gold-doped substrate is observed. This unexpected behavior is explained using the Fermi level localization in the silicon bandgap for the different DC bias conditions.

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Section: Introductionmentioning

confidence: 99%