2019
DOI: 10.1007/s12034-018-1714-z
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Low-level NO gas sensing properties of $$\hbox {Zn}_{1-x}\hbox {Sn}_{x}\hbox {O}$$ Zn 1 - x Sn x

Abstract: Zn 1−x Sn x O (x = 0, 0.05, 0.10, 0.15, 0.20) nanostructures have been grown through the successive ionic layer adsorption and reaction method. The structural, morphological and compositional properties of the nanostructures have been characterized through X-ray diffraction, scanning electron microscope and energy dispersive X-ray analysis, respectively. The NO gas sensing properties of sensors to 20 ppb have been systematically investigated in the dark and under UV light irradiation. A Zn 0.90 Sn 0.10 O senso… Show more

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Cited by 15 publications
(3 citation statements)
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“…In order to meet the above-mentioned requirements, a great number of materials have been tested as sensing elements against NO gas and using various sensing techniques, such as looking for a change in electrical resistance (chemoresistive sensor) [7], optical sensors [8] or surface acoustic wave devices [9,10]. Among them, chemoresistive sensors are by far the most investigated due to the simplicity of the measurement as well as the great variety of materials that can be used in this technique; however, most of them require a high operating temperature [1,2,[11][12][13][14] or UV irradiation [15][16][17] in order to detect NO gas concentrations below the TLV, leading to extra energy consumption. Thus, only a few works have been reported on NO detection at room temperature.…”
Section: Introductionmentioning
confidence: 99%
“…In order to meet the above-mentioned requirements, a great number of materials have been tested as sensing elements against NO gas and using various sensing techniques, such as looking for a change in electrical resistance (chemoresistive sensor) [7], optical sensors [8] or surface acoustic wave devices [9,10]. Among them, chemoresistive sensors are by far the most investigated due to the simplicity of the measurement as well as the great variety of materials that can be used in this technique; however, most of them require a high operating temperature [1,2,[11][12][13][14] or UV irradiation [15][16][17] in order to detect NO gas concentrations below the TLV, leading to extra energy consumption. Thus, only a few works have been reported on NO detection at room temperature.…”
Section: Introductionmentioning
confidence: 99%
“…Çok farklı teknolojilerde üretilmiş gaz sensörleri mevcuttur. Bunlardan bazıları, metal oksit yarı iletkenler (MOS), modifiye metal oksit yarı iletkenler (MMOS), iletken polimerler (CP) , kütle akustik dalga (BAW), kuvars kristal mikrobalanslar (QCM), kimyasal alan etkili transistörler (ChemFET), fiber optik (FO) sensörlerdir [9][10][11]. Düşük maliyetleri ve üretimlerinin kolaylığı gibi nedenlerden dolayı gaz sensör çalışmalarında çoğunlukla ZnO, TiO2, WO3 ve SnO2 vb metal oksit malzemeleri (MOS) yaygın olarak kullanılmaktadır [11][12].…”
Section: Gi̇ri̇ş (Introduction)unclassified
“…Bunlardan bazıları, metal oksit yarı iletkenler (MOS), modifiye metal oksit yarı iletkenler (MMOS), iletken polimerler (CP) , kütle akustik dalga (BAW), kuvars kristal mikrobalanslar (QCM), kimyasal alan etkili transistörler (ChemFET), fiber optik (FO) sensörlerdir [9][10][11]. Düşük maliyetleri ve üretimlerinin kolaylığı gibi nedenlerden dolayı gaz sensör çalışmalarında çoğunlukla ZnO, TiO2, WO3 ve SnO2 vb metal oksit malzemeleri (MOS) yaygın olarak kullanılmaktadır [11][12]. ZnO oda sıcaklığında 3,3 eV yasak enerji aralığına, 10-1-10-4 Ω.cm özdirencine, 0,74 angstron iyonik yarıçapına ve 1,65 elektron negatifliğine sahip, piezo elektrik, yüksek enerjili radyasyon dayanımı olan kristal yapıda önemli bir malzemedir.…”
Section: Gi̇ri̇ş (Introduction)unclassified