Low-leakage-current metal–insulator–semiconductor–insulator–metal photodetector on silicon with a SiO2 barrier-enhancement layer

Seto, M.; Rochefort, Carolina Corrêa; Jäger, Stefan; Hendriks, Rob; Hooft, G. W. ’t; Mark, Martin B. van der

doi:10.1063/1.124890

Cited by 15 publications

(7 citation statements)

References 5 publications

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“…In the above design, the gate electrodes and back Ohmic contacts were on different sides of the Si substrates. Both electrodes could be formed on the same side of thin-oxide/Si substrates to fabricate interdigitated metal-insulator-semiconductor-insulator-metal (MISIM) photodetectors ( Figure 14 ) [ 45 , 52 ]. Such a structure could be compared with the MSM structure with the same metal pattern, and then the advantages of the insertion of an insulator layer became obvious.…”

Section: Mis Visible-to-near-ir Photodetectorsmentioning

confidence: 99%

“…Such a structure could be compared with the MSM structure with the same metal pattern, and then the advantages of the insertion of an insulator layer became obvious. Seto et al showed that the insertion of a thin SiO 2 layer effectively reduced the dark current by a factor of 5.2 [ 52 ]. The increase in the dark current with the increasing bias was weaker.…”

Section: Mis Visible-to-near-ir Photodetectorsmentioning

confidence: 99%

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Metal-Insulator-Semiconductor Photodetectors

Lin

2010

Sensors

158

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The major radiation of the Sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III–V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows.

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Section: Mis Visible-to-near-ir Photodetectorsmentioning

confidence: 99%

Section: Mis Visible-to-near-ir Photodetectorsmentioning

confidence: 99%

Metal-Insulator-Semiconductor Photodetectors

Lin

2010

Sensors

158

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“…8 However, the potential barrier height of metal-semiconductor contact is inherently low, so the dark leakage current is remarkable and power handling capability is also limited. 9 The bandwidth of electromagnetic spectrum determined by the speed with which the photodetector response to variations in the incident optical power. As described above, PIN photodiodes and MSM photodetectors have limited bandwidths because of the junction capacitance.…”

Section: Fig 1 Schematic Of Semiconductor Photodetectorsmentioning

confidence: 99%

Investigation of semi-insulating gallium arsenide photoconductive photodetectors

et al. 2008

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The structure and working mechanism of a photoconductive photodetector are compared with a p + -i-n + (PIN) photodiode and a metal-semiconductor-metal (MSM) photodetector which is regarded as two back-to-back Schottky barrier photodiodes. Because a photoconductive photodetector has the features of high critical field strength, especially no junction capacitance and no dead zone, it has the main merits of high signal-noise ratio, ultrafast response and high quantum efficiency. We fabricate two photoconductive photodetectors in a lateral configuration on a semi-insulating (SI) gallium arsenide (GaAs) wafer, which wavelength range of response is from UV to 1.73μm due to two-photon absorption. It is shown by the volt-ampere characteristics curve that the dark leakage current of 30-μm-gap SI GaAs photoconductive photodetector at a bias field of 66 V/cm is less than 1.2 μA. Our experiment has demonstrated that SI GaAs photoconductive photodetectors are noteworthily superior to high-speed Si PIN photodetectors to measure ultrashort pulse lasers with the properties of ultrafast response, ultrawide spectral range, high signal-noise ratio and ease of fabrication.

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“…Several techniques were reported to decrease the dark current. Some of them consists in: depositing a passivation coating over the entire active area, minimizing the charge surface conduction by interface states [3]; minimize the tunneling current due to high electric field under the electrode contact pads, by implementing an insulator layer under the pads area [5][6]; pattern the entire metal over a very thin insulator film, to obtain an effect of barrier enhancement layer, decreasing the thermionic emission current [7]; and construct the MSM device with two different metals, one to each electrode, to obtain higher values of hole and electron barrier heights [8].…”

Section: Introductionmentioning

confidence: 99%

Fabrication of Ti-Si-Ti Metal-Semiconductor-Metal Photodetectors Using Low Temperature Rapid Thermal Annealing

Ohta¹,

Viana²,

Morimoto³

et al. 2020

JICS

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The electrical properties of Ti-Si-Ti Metal-Semiconductor-Metal (MSM) photodetector were studied as a function of annealing temperature, using Rapid Thermal Annealing (RTA) process. Low temperatures were used at the RTA (200-350°C) in order to avoid the formation of silicides.We observed a decrease in the dark current on samples annealed between 200 and 300°C. The lowest dark current was obtained in the sample annealed at 250°C (4.8 nA), which is one order of magnitude lower than as-deposited sample (53.5 nA). The sample annealed at 350°C had an increase in dark current (82.9 nA). This behavior of the dark current can be explained by the increase in the barrier height at 200-300°C annealing temperature range, due to increase of the thickness of the amorphous interdiffused Ti-Si interfacial layer, and decrease in the barrier value at sample annealed at 350°C, due to pre formation of C49 TiSi2.

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Low-leakage-current metal–insulator–semiconductor–insulator–metal photodetector on silicon with a SiO2 barrier-enhancement layer

Cited by 15 publications

References 5 publications

Metal-Insulator-Semiconductor Photodetectors

Metal-Insulator-Semiconductor Photodetectors

Investigation of semi-insulating gallium arsenide photoconductive photodetectors

Fabrication of Ti-Si-Ti Metal-Semiconductor-Metal Photodetectors Using Low Temperature Rapid Thermal Annealing

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