Low-k materials for microelectronics interconnects

Chiu, Patrick G.; Hsu, D. T.; Kim, Hyungkun; Shi, Frank G.; Nalwa, Hari Singh; Zhao, Bin

doi:10.1016/b978-012513745-4/50041-x

Cited by 2 publications

(3 citation statements)

References 128 publications

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“…This is against what was reported in literature which states no weight loss occurring below 400°C (Johnson et al , 1990). Therefore, the thermal stability of BCB may limit its implementation in IC processing where thermal stability greater than 400°C is required, especially for aluminium and tungsten metallization processes (Chiu et al , 2001; Mills et al , 1997).…”

Section: Resultsmentioning

confidence: 99%

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Characterization of low‐k benzocyclobutene dielectric thin film

Chan¹,

Teo²,

Zhong³

2003

Microelectronics International

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This paper reports the characterization of a photosensitive benzocyclobutene (BCB), a low dielectric constant spin‐on polymer for use as interlayer dielectric in the microelectronics industry. Research work is divided into three main sections. First, BCB thin film characterization was done to investigate the effects of curing conditions on BCB film thickness, dielectric properties, optical properties and extent of cure. Thermal stability of BCB was then evaluated using thermogravimetric analysis (TGA) to detect weight loss during thermal curing and degradation. Finally, curing kinetics study was conducted using both differential scanning calorimetry (DSC) dynamic (American Society for Testing and Materials method) and isothermal approaches. The first study shows that determination of vitrification point during thermal curing of BCB is crucial to predict film properties. By curing to just before vitrification, lowest refractive index, hence dielectric constant, could be obtained.

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Section: Resultsmentioning

confidence: 99%

“…The value of k depends on film chemistry and deposition method. The best low‐ k dielectrics should perform reliably upon integration with the manufacturing process, exhibiting good thermal stability (up to 425°C), mechanical stability and compatibility with etching, stripping, cleaning and polishing processes (Chiu et al , 2001).…”

Section: Introductionmentioning

confidence: 99%

Characterization of low‐k benzocyclobutene dielectric thin film

Chan¹,

Teo²,

Zhong³

2003

Microelectronics International

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“…Among low-materials, porous Si-O-C (p-SiOC) with silsesquioxane (SSQ) and silica based materials have been widely investigated. [2][3][4][5][6][7][8] However, their electrical and physical properties can be easily changed during fabrication processes such as dry etching, ashing, pre-cleaning and metal deposition. The phenomenon is referred to as the process-induced damage.…”

Section: Introductionmentioning

confidence: 99%

Process-Induced Damage Characterization of Patterned Low-κ Film Using Electron Energy Loss Spectroscopy Technique

Otsuka

Shimizu

Kawasaki

et al. 2010

Jpn. J. Appl. Phys.

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A patterned low dielectric constant () film composed of a porous Si-O-C layer (p-SiOC) and a Cu interconnect is characterized by electron energy loss spectroscopy (EELS) with transmission electron microscopy. The relative thickness distribution map is obtained by the valence EELS (VEELS) log-ratio technique with nanometer scale resolution. Two regions with depleted carbon composition and varied relative thickness are found in the p-SiOC layer near the side wall of Cu lines, which are ascribed to the process-induced damage. They cannot be identified only by the conventional elemental mapping obtained by the core EELS (CEELS). Since the VEELS log-ratio technique is convenient to perform, this should be a useful method to routinely characterize the process-induced damage of the patterned lowfilms with Cu interconnects for advanced integration devices. #

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Low-k materials for microelectronics interconnects

Cited by 2 publications

References 128 publications

Characterization of low‐k benzocyclobutene dielectric thin film

Characterization of low‐k benzocyclobutene dielectric thin film

Process-Induced Damage Characterization of Patterned Low-κ Film Using Electron Energy Loss Spectroscopy Technique

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