2008 10th Electronics Packaging Technology Conference 2008
DOI: 10.1109/eptc.2008.4763476
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Low K CMOS65 Ball Grid Array 40μm Pitch Wire Bonding Process Development

Abstract: of the product of the total resistance and capacitance of the IC performance and cost drive interconnect dimensions to whole interconnects structure. Lowing the dielectric constant shrink to ever-smaller sizes the RC delay becomes the between the interconnect layers and copper metallization dominant factor to impact IC performance. The RC delay is a became necessary.[1]. function of the product of the total resistance and capacitance Low-k is generally defined as K value of less than 3dusow of the whole interc… Show more

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