Low-inductance module construction for high speed, high-current IGBT module suitable for electric vehicle application

Tsunoda, T.; Matsuda, T.; Nakadaira, Y.; Nakayama, H.; Sasada, Yoshito

doi:10.1109/ispsd.1993.297140

Cited by 6 publications

(1 citation statement)

References 2 publications

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“…Previous attempts to reduce the module parasitic inductances [3][4][5][6][7] have been constrained by the desire to maintain compatibility with standard screw-type power terminals, focusing instead on internal layout of the module. By failing to address the inductance of power terminals, these designs have achieved limited improvements.…”

Section: Q1mentioning

confidence: 99%

Low inductance power module with blade connector

Stevanovic

Beaupre

Delgado

et al. 2010

2010 Twenty-Fifth Annual IEEE Applied Power Electronics Conference and Exposition (APEC)

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A novel single-switch power module has been developed, featuring a laminated blade connector for low inductance interconnect to a busbar. The module was designed, optimized and experimentally validated as part of a high frequency three-phase converter, demonstrating parasitic inductances of less than one nano henry for the module and as low as five nano henries for the converter phase-leg commutation loop. The flexible plug-in hardware facilitated direct comparison of switching performance between three different chipsets, including a 150A and a 300A hybrid designs using the fastest 1200V silicon IGBTs with silicon carbide (SiC) Schottky diodes, as well as a 150A all-SiC module with emerging SiC MOSFETs. The results were also compared with switching performance of standard modules. First, the impact of parasitic inductance on switching performance was quantified by testing the same 300A hybrid chipset in an industry-standard module. Compared to the low inductance blade POL module, the standard module had 65% higher voltage overshoot and 30% higher total switching losses. Second, the switching performance of the 150A, 1200V fast IGBT, in either standard silicon or the hybrid blade module, was compared with the all-SiC blade module under the same test conditions. The IGBT switching losses of the standard silicon module were 3.5 times higher, while the hybrid blade module losses were 2.5 times higher than those of the all-SiC module. The new low inductance blade module is an excellent package for the new generation of fast silicon IGBTs and the emerging SiC power devices. The module will enable efficient power conversion at significantly higher switching frequencies and power densities.

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Section: Q1mentioning

confidence: 99%

Low inductance power module with blade connector

Stevanovic

Beaupre

Delgado

et al. 2010

2010 Twenty-Fifth Annual IEEE Applied Power Electronics Conference and Exposition (APEC)

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High Voltage Intelligent Power Module Layout Design for Parasitic Inductance Reduction

Qiu

Zheng

Wang

et al. 2019

J. Phys.: Conf. Ser.

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When designing the high voltage intelligent power module, layout design is as important as circuit design. Appropriate layout design can avoid many problems associated with these types of power modules. This paper relates generally to the layout design of the power stage components within a 600V/30A high voltage SiC intelligent power module for low inductance. Several crucial aspects when designing the power stage layout have been pointed out. It also presents how to optimize the layout design to minimize the parasitic inductance.

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Comprehensive optimization method for thermal properties and parasitics in power modules

Mühlfeld

Fuchs

2010

2010 IEEE Energy Conversion Congress and Exposition

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Low-inductance module construction for high speed, high-current IGBT module suitable for electric vehicle application

Cited by 6 publications

References 2 publications

Low inductance power module with blade connector

Low inductance power module with blade connector

High Voltage Intelligent Power Module Layout Design for Parasitic Inductance Reduction

Comprehensive optimization method for thermal properties and parasitics in power modules

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