Low<i>k</i>thin films based on rf plasma-polymerized aniline

Saravanan, S.; Mathai, Cijy; Venkatachalam, S.; Anantharaman, M. R.

doi:10.1088/1367-2630/6/1/064

Cited by 46 publications

(32 citation statements)

References 14 publications

(14 reference statements)

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“…Thermal, electrical and mechanical properties of polymers are useful for use in technological and biological applications [1][2][3][4][5][6][7]. Thin polymer films obtained by plasma polymerization are generally more biocompatible than conventional biomaterials such as Silastic.…”

Section: Introductionmentioning

confidence: 99%

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The thickness dependence of dielectric properties in the plasma polymer thin films

Ulutaş

2018

Can. J. Phys.

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In this study, the results of dielectric spectroscopy of plasma polymerized poly(ethylene oxide) thin films are presented. The films were deposited by plasma-assisted physical vapour deposition at radio-frequency plasma discharge power of 5 W, and film thicknesses of 20, 100, and 250 nm. Dielectric measurements of the films were performed in the frequency range of 10−1–107 Hz and temperature was scanned between 173 and 353 K. The dielectric constant ([Formula: see text]) and dielectric loss ([Formula: see text]) of plasma polymerized poly(ethylene oxide) thin films were calculated by measuring capacitance (C) and dielectric loss factor (tanδ). It was observed that there were two relaxation mechanisms in the investigated frequency range. These were called α and β relaxations. These relaxations shift toward higher frequencies with increasing temperature. Moreover, α-relaxation starts to appear at different temperatures. This shows the difference between the polarizability abilities of samples at the same temperature and same frequencies. The reason for this behavior can be expressed by the dead layer concept, which is a result of good adhesion of the bottom layer of plasma polymer to the substrate. In light of these interpretations, with thinner samples it is possible to have structurally similar thin films like thin films deposited at high plasma power. A thinner film may support more transparency and these thinner films may be effective as coverage of optical devices, such as lenses, visors, etc.

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Section: Introductionmentioning

confidence: 99%

“…They may have properties such as homogeneity, free from pinholes, water insolubility, high electrical resistance, chemical stability, high cross-linking density, good adhesion and thermal stability [7,[10][11][12][13]. Plasma polymer thin films, were first deposited by Bradley and Hammes [14].…”

Section: Introductionmentioning

confidence: 99%

The thickness dependence of dielectric properties in the plasma polymer thin films

Ulutaş

2018

Can. J. Phys.

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“…It must be mentioned here that the relative permittivity of Pd(dmgH) 2 material is lower than that of SiO 2 (k=3.82), which means that it is possible to consider it as a low-k dielectric material. Low -k material thin films are used as interlayer dielectrics (ILD) or intermetal dielectrics (IMD) in integrated circuit technology in order to reduce parasitic capacitance, decreases the RC time constant, reduce circuit size, and thus improve the overall speed of ICs [11][12][13].…”

Section: Introductionmentioning

confidence: 99%

DC conduction in bis(dimethylglyoximato)palladium(II) thin films

Dakhel

2007

Cryst. Res. Technol.

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Bis(dimethylglyoximato)palladium (II) complex thin films of polycrystalline structure were prepared by sublimation in a vacuum at 140°C on p-Si substrates. After carrying out the characterisation of the prepared films by X-ray diffraction and X-ray fluorescence methods, Al-complex-Si MIS devices were fabricated. The constructed MIS structure was characterised by measuring the capacitance as a function of gate voltage at 1 MHz. The dependence of dc-current density on gate voltage and temperature in the range of 293 -328 K of the MIS device was measured. It was found that the experimental data follow the trap-charge-limited spacecharge-limited conductivity mechanism, from which the total concentration and the exponential energy distribution of the trap density were determined. In general, the measured quantities suggest that the conduction can be realised by thermally assisted hopping between localised states bundled in a very narrow band lying energetically near the mobility band edge. Moreover, results show that it is possible to use a film of the complex in applications of low-k dielectric material.

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“…Polyaniline thin films were deposited using an rf plasma polymerization technique by Saravanan et al [19]. Dielectric constant and ac conductivity were measured in the frequency range 100 Hz to 1 MHz and the temperature range 300-375 K. These films exhibited low dielectric constant values, which were stable over a wide range of frequencies.…”

Section: Introductionmentioning

confidence: 99%