Advanced Microsystems for Automotive Applications 2005 2005
DOI: 10.1007/3-540-27463-4_34
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Low g Inertial Sensor based on High Aspect Ratio MEMS

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Cited by 5 publications
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“…However, the capacitances of sensing electrodes are limited by the poly-Si thickness (2 μm) of comb-fingers. The high aspect ratio processes capable of defining narrow trenches and thick comb-electrodes provide the solution to increase sensing capacitance substantially [23]. The differential capacitive sensing SOI accelerometer using vertical-combs is presented in [27].…”
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confidence: 99%
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“…However, the capacitances of sensing electrodes are limited by the poly-Si thickness (2 μm) of comb-fingers. The high aspect ratio processes capable of defining narrow trenches and thick comb-electrodes provide the solution to increase sensing capacitance substantially [23]. The differential capacitive sensing SOI accelerometer using vertical-combs is presented in [27].…”
mentioning
confidence: 99%
“…Moreover, CMOS-MEMS multi-layer comb-electrodes accelerometer has also been demonstrated in [10]. The poly-Si micromachining is also a mature technology to fabricate commercial capacitive accelerometers [23], [28], [29]. However, the surface micromachining technology for accelerometer design has some limitations, such as the size of proof mass and the sensing area.…”
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