Low-Frequency Noises and DLTS Studies in HgCdTe MWIR Photodiodes

LWIR Lateral Effect Position Sensitive HgCdTe Photodetector at 205 K

“…which is a relatively small value compared to some other data from the last few years reported for HgCdTe devices at higher operating temperatures, e.g., for an MOCVD grown MWIR barrier detector at 205 K-α = 2.7 × 10 −4 [54] and for a liquid phase epitaxy (LPE) grown MWIR photodiode at 290 K-α = 2-40 × 10 −5 [65]. However, this may reflect not so much the quality of our photodiode as the larger share of the diffusion current in its dark current.…”

“…Using Equation (6), taking the dark current noise density per one channel = 4.1 × 10 −9 A/Hz 1/2 ( Figure 23 ) and the dark current per one channel at the applied reverse bias I d/ch = 12 mA ( Figure 8 ), we obtain the 1/f noise related Tobin coefficient: which is a relatively small value compared to some other data from the last few years reported for HgCdTe devices at higher operating temperatures, e.g., for an MOCVD grown MWIR barrier detector at 205 K— = 2.7 × 10 −4 [ 54 ] and for a liquid phase epitaxy (LPE) grown MWIR photodiode at 290 K— = 2–40 × 10 −5 [ 65 ]. However, this may reflect not so much the quality of our photodiode as the larger share of the diffusion current in its dark current.…”

RTS Noise Detection and Voltage Effect on RTS in HgCdTe Focal-Plane Arrays

“…We can hypothesize that high variations of the activation energy are due to the thermodynamic barrier associated with the jump being reduced along the increase in applied bias. It has already been shown that RTS was related to defects in the material [12]. A Poole-Frenkel [13] model could be considered, in which a dissymmetry of the band diagram around the defect implied in the process appears while applying a voltage to the system, thus lowering the barrier.…”

Nano-scale structural studies of defects in arsenic-implanted n and p-type HgCdTe films

“…Ion implantation is the method of choice for ex situ fabrication of p-n junctions in Hg 1-x Cd x Te (MCT), one of the most important materials for infrared photo-electronics. Recently, there has been much interest in photodiodes based on arsenic implantation in MCT with n-type conductivity (Gravrand et al 2009;Mollard et al 2011;Park et al 2016;Bazovkin et al 2016;Bommena et al 2015;Guinedor et al 2019). Dark currents in 'p + -n'-junctions, which are fabricated as a result of this implantation, are typically lower than those in 'n + -p'-junctions due to the fact that in the n-'base' carrier lifetime is governed by the band-to-band CHCC recombination, which ensures an increased lifetime and the low dark current.…”