2013
DOI: 10.1063/1.4792741
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Low-frequency noise properties of beryllium δ-doped GaAs/AlAs quantum wells near the Mott transition

Abstract: Noise properties of beryllium delta-doped GaAs/AlAs multiple quantum wells, doped both above and below the Mott transition, are studied within the frequency range of 10 HzÀ20 kHz and at temperature from 77 K to 350 K. It is shown that the generation-recombination noise in structures close to the Mott transition exhibits two peaks-a frequency and temperature-dependent peak between 120 and 180 K and a broadband, frequency-and temperature-nearly independent peak around 270 K. Activation energies are estimated; or… Show more

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Cited by 5 publications
(3 citation statements)
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“…Electrical conduction in such composite materials based on a dielectric matrix and a conductive filler can be achieved in two ways via charge carrier transport: within the conductive structure of the filler or through the dielectric matrix by tunneling between the filler particles [ 15 , 16 ]. The characteristics of low-frequency electrical noise are well known to be extremely sensitive to the physical processes corresponding to charge carrier transport mechanisms in various materials and devices [ 17 , 18 , 19 , 20 ]. However, papers on low-frequency electrical fluctuations in carbon composite devices are very rare.…”
Section: Introductionmentioning
confidence: 99%
“…Electrical conduction in such composite materials based on a dielectric matrix and a conductive filler can be achieved in two ways via charge carrier transport: within the conductive structure of the filler or through the dielectric matrix by tunneling between the filler particles [ 15 , 16 ]. The characteristics of low-frequency electrical noise are well known to be extremely sensitive to the physical processes corresponding to charge carrier transport mechanisms in various materials and devices [ 17 , 18 , 19 , 20 ]. However, papers on low-frequency electrical fluctuations in carbon composite devices are very rare.…”
Section: Introductionmentioning
confidence: 99%
“…The low‐frequency noise spectroscopy is a very sensitive experimental tool that gives information on physical processes and enables clearing‐up the conduction mechanisms in composite materials . It gives a valuable information on the charge carrier transport and conduction mechanisms in new materials .…”
Section: Introductionmentioning
confidence: 99%
“…Electronic noise can originate from dark currents, temperature fluctuations, and trap states. The fundamental noise components (shot noise and thermal noise), are frequency independent, and can be controlled to some extent by the choice of device architecture, and through optimizing the detailed design 1 , including the choice of active materials, growth technique, operating temperature, and doping levels.…”
Section: Introductionmentioning
confidence: 99%