Low-frequency noise overshoot in ultrathin gate oxide silicon-on-insulator metal–oxide–semiconductor field-effect transistors

Mercha, A.; Simoen, Eddy; Meer, H. van; Claeys, Cor

doi:10.1063/1.1561575

Cited by 35 publications

(26 citation statements)

References 14 publications

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“…Once the V g value exceeds the GIFBEs beginning gate voltage (about 1.2-1.3V), an excess noise (shot noise) takes place obviously, which is characterized by the superposition of a Lorentzian-like component on the conventional 1/f noise spectrum. The behavior of this excess noise which happens in the linear region for PDSOI devices is same as the Kink-related excess noise previously observed in the saturation region [6,7,8,9]. ) as a function of the effective front gate voltage before and after irradiation, and corresponds to a frequency f = 10 HZ.…”

Section: Resultsmentioning

confidence: 51%

“…Whereas the aggressive shrinking of gate oxide thickness in partially-depleted (PD) SOI MOSFETs leads to the gate-induced floating body effects (GIFBEs) in the linear operation region [5,6], which have many similarities to the conventional drain-induced floating body effects (DIFBEs) at high drain bias [7]. Once the GIFBEs happen, a Lorentzian-like noise component will superimpose to the low-frequency (LF) noise due to the appearance of the excess noise [8,9], which is similar to the phenomenon that the DIFBEs in PDSOI devices give rise to the Kink-related excess noise [10,11].…”

Section: Introductionmentioning

confidence: 99%

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Total dose radiation induced changes of the floating body effects in the partially depleted SOI NMOS with ultrathin gate oxide

Dai

Zhang

et al. 2018

IEICE Electron. Express

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Abstract:In this paper, the impacts of total dose radiation on the low-frequency noise and gate induced floating body effects (GIFBEs) for the 130nm partially depleted silicon-on-insulator N-type metal-oxide semiconductors transistor with an ultrathin gate oxide have been investigated. It is shown that the second transconductance gm peak becomes smaller after irradiation when the Lorentzian-like excess noise is more pronounced. The traps induced by irradiation at shallow trench isolation/body and buried-oxide/body interface can act as the recombination centers to increase the source-body diode current, which results in the changes in the excess noise and GIFBEs.

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Section: Resultsmentioning

confidence: 51%

Section: Introductionmentioning

confidence: 99%

Total dose radiation induced changes of the floating body effects in the partially depleted SOI NMOS with ultrathin gate oxide

Dai

Zhang

et al. 2018

IEICE Electron. Express

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“…Such structures have a number of advantages, which are especially important for the solution of downscaling-related problems. One of the advantages is that the linear kink effect and the accompanying Lorentzian fluctuations in the completely depleted transistors turn out to be significantly weakened [3,11]. In this case, however, the accumulating voltage at the back gate does not attenuate (as in the case of partially depleted devices), but enhances these effects [3].…”

Section: Lke and Bgi Lorentzians In Current Noise Spectramentioning

confidence: 92%

Physics of fluctuation processes in downscaled silicon MOSFETs

Lukyanchikova

Simoen²,

Claeys

2009

Radiophys Quantum El

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Physical mechanics of fluctuation processes in advanced submicron and decananometer MOSFETs (metal-oxide-semiconductor field-effect transistors) including the ultra-thin film SOI (siliconon-insulator) devices using strained silicon films are reviewed. The review is substantially based on the results obtained by the authors. It is shown that the following drastic changes occur in the nature and parameters of noise in such devices as a result of their downscaling when the gate oxide thickness and the channel length and width are decreased, the SOI substrates are used, the silicon film thickness is reduced, the film doping level is varied, the strained silicon films are employed, etc. Firstly, the Lorentzian components can appear in the current noise spectra. Those components are due to (i) electron tunneling from the valence band through the gate oxide in the SOI MOSFETs of a sufficiently thin gate oxide (LKE-Lorentzians); (ii) Nyquist fluctuations generated in the source and drain regions near the back Si/SiO 2 interface in the SOI MOSFETs (BGI Lorentzians); (iii) electron exchange between the channel and some single trap in the gate oxide of the transistors with sufficiently small length and width of the channel (RTS Lorentzians). Secondly, the 1/f-noise level can increase due to (i) the appearance of recombination processes near the Si/SiO 2 interface activated by the currents of electron tunneling from the valence band; (ii) an increase in the trap density in the gate oxide of the devices fabricated on the biaxially tensile-strained silicon films; (iii) the contribution of the 1/f fluctuations of the current flowing through the gate oxide as a result of electron tunneling from the conduction band. At the same time, the 1/f-noise level may decrease due to a decrease in the trap density in the gate oxide of the transistors fabricated on the uniaxially tensile-strained silicon films. Moreover, a 1/f 1.7 component may appear in the noise spectra for the transistors of a sufficiently thin gate oxide, whose component is due to charge fluctuations on the defects located near the interface between the gate polysilicon and the gate oxide. Thus, the main physical mechanics of fluctuation processes in advanced submicron and decananometer MOSFETs are considered and it is shown by what physical reasons and how the downscaling of MOSFETs affects their fluctuation characteristics.

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“…The trade-off between performance and power dissipation is the most fundamentally challenging issue on the horizon for scaling of CMOS ICs. [121,53] This issue threatens the roadmap of continuous scaling of CMOS devices. [54,100]A solution must be found to insure the commercial dominance of CMOS ICs in the future, so it is little wonder that SOI, which offers solutions to this issue, is receiving serious attention at leading-edge companies developing advanced CMOS ICs.…”

Section: Introductionmentioning

confidence: 99%