Abstract:In this paper, we present a new numerical model of the inversion charge power spectral density in FDSOI MOSFET devices with ultra thin body. Unlike previous classical models, we don't use the equivalent concept which relates the fluctuation of the oxide charge to the flat-band voltage fluctuation. Localized noise sources in the oxide are implanted into the model and by using a Green's function approach, the spectral cross-correlation of the electrical potential is evaluated at each node in the device mesh in o… Show more
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