Low-frequency noise measurements used for semiconductors light active devices

Abstract

Three different sets of semiconductors light active devices were by low frequency noise diagnostic described. In the first set the low frequency noise of 2.3 m CW GaSb based Laser Diodes was measured, in set II the noise characteristic of forward biased silicon monocrystalline solar cells were measured and in set III the noise characteristic of forward biased Si:H amorphous solar cells were measured. The results of noise measurement in all systems were compared.

Correlated In Situ Low‐Frequency Noise and Impedance Spectroscopy Reveal Recombination Dynamics in Organic Solar Cells Using Fullerene and Non‐Fullerene Acceptors

“…Another possible source of this flattening may be carrier generation‐recombination noise that shows flattening of the noise spectral density before a sharp downward turn (Lorentzian) at a corner frequency beyond the bandwidth explored here . Generation‐recombination noise has been observed before in similar amorphous systems that possess a high degree of structural disorder (e.g., amorphous silicon solar cells and pentacene thin‐film transistors). In this report, we do not pursue the source of this noise at higher frequencies further and instead focus the analysis in the low‐frequency regime where 1/ f behavior is firmly established.…”