Low-Frequency noise investigation of AlGaN/GaN high-electron-mobility transistors

Andrade, Maria Gorete Carreira; Bergamim, Luis Felipe de Oliveira; Júnior, Braz Baptista; Nogueira, Carlos Roberto; Silva, Fábio Alex da; Takakura, Kenichiro; Parvais, B.; Simoen, Eddy

doi:10.1016/j.sse.2021.108050

Cited by 5 publications

(1 citation statement)

References 18 publications

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“…Although several studies have shown that enhancement in LFN is ascribed to the channel mobility degradation/fluctuation in the partially-gaterecessed [24] and the fully-gate-recessed AlGaN/GaN MIS-FETs [25][26][27][28], the underlying physics is not clear. Moreover, in addition to 1/f LFN spectra [21,[29][30][31][32][33][34], Lorentzian LFN spectra are sometimes observed [7,[35][36][37][38][39][40][41], which are strongly related to the insulator materials and the device fabrication processes. Thus, LFN characterization is an important diagnosis for gate-recessed AlGaN/GaN MIS-FETs.…”

Section: Introductionmentioning

confidence: 99%

Low-frequency noise in AlTiO/AlGaN/GaN metal-insulator-semiconductor field-effect transistors with non-gate-recessed or partially-gate-recessed structures

Nguyen,

Deng,

Suzuki

2023

Semicond. Sci. Technol.

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We have systematically investigated low-frequency noise (LFN) in AlTiO/AlGaN/GaN metalinsulator-semiconductor field-effect transistors (MIS-FETs) with non-gate-recessed or partially-gate-recessed structures, where gate insulators using AlTiO, an alloy of Al2O3 and TiO2, are obtained by atomic layer deposition. For drain current LFN, we find pure 1/f spectra for the well-above-threshold regime, and superposition of 1/f and Lorentzian spectra near the threshold voltage. The Hooge parameters are evaluated from the 1/f contribution and found to be independent of the AlTiO thickness. However, the remaining AlGaN thickness strongly affects the Hooge parameter near the threshold voltage; in the low channel electron concentration regime of the partially-gate-recessed FETs, a smaller remaining AlGaN thickness gives a larger Hooge parameter proportional to the inverse of the electron concentration, indicating that channel electron number fluctuation dominates the Hooge parameter. We consider that the channel electron number fluctuation is caused by electron traps introduced by the recess etching process in the remaining AlGaN. On the other hand, the Lorentzian spectra give specific time constants almost independent of the AlTiO thickness and the remaining AlGaN thickness, corresponding to trap depths of 0.6-0.8 eV. This can be attributed to traps in AlTiO near the AlTiO/AlGaN interface.

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