Low-frequency noise in thick-film structures caused by traps in glass barriers

Mrak, I.; Jevtic, M.M.; Stanimirovic, Z.

doi:10.1109/icmel.1997.625281

Cited by 3 publications

(3 citation statements)

References 4 publications

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“…A thick IMC layer can result in degradation of the solder joint reliability and lead to the increase of the contact noise. According to the study of the LFN of thick-film resistors [11], [12], the bulk noise of the resistors comes from the conduction through conductive grains or contacts between them, and from the conduction through glass barriers due to the fluctuations caused by the presence of the traps in the glass barrier. For thermistors based on Mn-Ni-Co-O spinel ternary oxide, their conductivity is described by a thermally activated charge carriers phonon-assisted hopping between Mn4+ and Mn3+ on the octahedral sites [13], [14] and tunnelling through the grain boundaries [15].…”

Section: B Degradation Of Low-frequency Noise and Its Mechanismmentioning

confidence: 99%

Low-frequency noise and reliability of infrared detectors based on ternary Mn-Ni-Co

Zhang

Bao

et al. 2013

2013 22nd International Conference on Noise and Fluctuations (ICNF)

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Degradation of low-frequency noise (LFN) of infrared detectors (IR), based on thin film thermistors of ternary Mn-Ni-Co-O, is one of their main failure modes. Three kinds of stresses, short-term isothermal ageing (40°C, hold for 4 hours), long-term isothermal ageing with bias (bias voltage of ±15V, 40°C, hold for 600 hours) and thermal cycling (−40°C to +40°C, 1°C/min, hold for one hour, 20 cyclings), induced degradations in IR have been investigated. The results show that the ageing characteristics of electrical resistance of the samples with the same chemical composition and technological parameters may have the similar behaviour; however, the degradation of LFN shows different trends, and all malfunctions present abrupt increment of LFN. The changes of the noise figure of the samples under three stresses assume that there are two sources of LFN, namely, the contact noise at the solder joints which used to bound the inner Pt leads, and the thermistor bulk noise. The degradations of LFN during the short-term isothermal ageing and long-term isothermal ageing with dc bias may be ascribed to the defects within the thermistor bulk; these two degradations show positive correlation. The degradations of LFN during the thermal cycling may be ascribed to the defects at the contacts. Thus, analyzing the short-term isothermal ageing and thermal cycling induced degradations of the LFN of IR could be an effective screening method, which can significantly shorten the test time.

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Section: B Degradation Of Low-frequency Noise and Its Mechanismmentioning

confidence: 99%

Low-frequency noise and reliability of infrared detectors based on ternary Mn-Ni-Co

Zhang

Bao

et al. 2013

2013 22nd International Conference on Noise and Fluctuations (ICNF)

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“…where x 1 is the position of the trap, 0 is the vacuum electrical permitivity, r is the relative electrical permitivity of glass while and are parameters given in [5].…”

Section: Noise Index and Deterministic Modelmentioning

confidence: 99%

Noise and resistance as indicators of HVP stressing impact on performances of conventional TFRs

Stanimirovic¹,

Jevtic²,

Stanimirovic³

2008

2008 26th International Conference on Microelectronics

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In order to determine possible causes of resistance and noise index changes in thick-film resistors during highvoltage pulse stressing, deterministic model was used. Irreversible micro-and macro-structural changes observed during highvoltage pulse stressing of thick film resistors based on 1, 10 and 100 k /sq compositions were analyzed and performed analysis resulted in determination of primary technological, geometrical and physical parameters responsible for observed changes.

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“…Obtained results could be explained by microscopic changes in thick-film resistors and for that reason we have generated elemental RRN cells shown in figure 1 using following parameters taken from deterministic model: diameter of a conducting particle d=150nm, lower limit of a glass particle diameter LL=0.1 pRm, upper limit of a glass particle diameter UL=3Rm. Resistance of the sintered contact between two neighboring conducting particles Rc and barrier resistance determining the resistance of the MIM structure RB were calculated using parameters from [4]. Elemental RRN cells in 3D planar arrangement approximated thick-film resistors used in the experiment before (figure 1) and after high-voltage pulse stressing.…”

Section: Model Of the Random Resistor Networkmentioning

confidence: 99%

Computer Simulation of Thick-Film Resistors Based on 3D Planar RRN Model

Stanimirovic¹,

Jevtic

Stanimirovic³

2005

EUROCON 2005 - The International Conference on "Computer as a Tool"

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In this paper a 3D planar random resistor network model as a thick-film resistor model based on percolation theory combined with deterministic model is presented. Thick-film resistors are described as random resistor networks where parameters from deterministic model introduce microstructural characteristics. The percolation site model with double percolation introduces macrostructural characteristics of thick-film resistors into newly developed combined model. The model is illustrated by a computer simmulation of thick-film resistor degradation caused by high-voltage pulse stressing. Obtained results are compared with experimental results for thick-film resistors with 10kQ/sq and 100kQ/sq sheet resistances.

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Low-frequency noise in thick-film structures caused by traps in glass barriers

Cited by 3 publications

References 4 publications

Low-frequency noise and reliability of infrared detectors based on ternary Mn-Ni-Co

Low-frequency noise and reliability of infrared detectors based on ternary Mn-Ni-Co

Noise and resistance as indicators of HVP stressing impact on performances of conventional TFRs

Computer Simulation of Thick-Film Resistors Based on 3D Planar RRN Model

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