Low frequency noise in GaN metal semiconductor and metal oxide semiconductor field effect transistors

Rumyantsev, Sergey; Pala, Nezih; Shur, M. S.; Gaška, R.; Levinshteǐn, M. E.; Khan, M. Asif; Simin, Grigory; Hu, X.; Yang, J.

doi:10.1063/1.1372364

Cited by 49 publications

(26 citation statements)

References 20 publications

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“…However, like with any other new material systems, graphene has to meet the stringent requirements for the low-frequency 1/f noise level [2]. For example, recent development of GaN technology for radio-frequency and optical communications required substantial decrease of the 1/f noise in this material [2,17].…”

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confidence: 99%

Reduction of 1/f noise in graphene after electron-beam irradiation

Hossain

Rumyantsev

Shur

et al. 2013

Applied Physics Letters

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We investigated the effect of the electron-beam irradiation on the level of the low-frequency 1/f noise in graphene devices. It was found that 1/f noise in graphene reveals an anomalous characteristic -it reduces with increasing concentration of defects induced by irradiation. The increased amount of structural disorder in graphene under irradiation was verified with microRaman spectroscopy. The bombardment of graphene devices with 20-keV electrons reduced the noise spectral density, S I /I 2 (I is the source-drain current) by an order-of magnitude at the radiation dose of 10 4 C/cm 2 . Our theoretical considerations suggest that the observed noise reduction after irradiation can be more readily explained if the mechanism of 1/f noise in graphene is related to the electron-mobility fluctuations. The obtained results are important for the proposed graphene applications in analog, mixed-signal and radio-frequency systems, integrated circuit interconnects and sensors.Noise Suppression in Graphene, UCR -RPI -Ioffe (2012) 3The level of the flicker 1/f noise [1] is one of the key metrics that each new material has to pass before it can be used for practical devices (f is the frequency) [2]. Graphene [3] has shown a great potential for applications in high-frequency communications [4][5], analog circuits [6] and sensors [7][8]. The envisioned applications require a low level of 1/f noise, which contributes to the phase-noise of communication systems [2] and limits the sensor sensitivity [7]. Despite significant research efforts [9][10][11][12][13][14][15] there is still no conventionally accepted model for physical mechanisms behind 1/f noise in graphene. Correspondingly, no comprehensive methods for 1/f noise suppression in graphene devices have been developed.In this Letter we show that 1/f noise in graphene reveals an anomalous characteristic -it reduces with increasing concentration of defects induced by irradiation. We found that bombardment of graphene devices with 20-keV electrons can reduce the noise spectral density, S I /I 2 (I is the source-drain current) by an order-of magnitude at the radiation dose (RD) of 10 4 C/cm 2 . Our theoretical analysis suggests that the observed noise suppression after introduction of defects can be explained if the mechanism of 1/f noise in graphene is related to the electron-mobility fluctuations rather than to the carrier-density fluctuations. Apart from contributing to understanding the physics behind 1/f noise in graphene our results can possibly offer a practical method for noise reduction in various graphene devices. Graphene is relatively susceptible to the electron and ion bombardment owing to its single-atom thickness [21][22][23]. Electron irradiation can introduce different types of defects in graphene Noise Suppression in Graphene, UCR -RPI -Ioffe (2012) 5 depending on the beam energy and local environment, e.g. presence of organic contaminants. For this study we selected the electron energy of 20 keV in order to exclude the severe knock-on damage to ...

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mentioning

confidence: 99%

Reduction of 1/f noise in graphene after electron-beam irradiation

Hossain

Rumyantsev

Shur

et al. 2013

Applied Physics Letters

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“…2. If the contact noise is dominating, one would expect an inverse square dependence of normalized noise power over the contact-spacing [28]. We find that the normalized noise power is proportional to the inverse of contact-spacing, indicating that contact noise is not dominant in the devices.…”

Section: Resultsmentioning

confidence: 86%

Low-frequency noise properties of double channel AlGaN/GaN HEMTs

Jha

Surya

Chen

et al. 2008

Solid-State Electronics

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“…Modeling results proves that the 1/f noise is more significant for small lengths [23] [24]. This phenomenon is due to variation of channel resistance as well as variation in access resistances of gate (R g ) and source (R s ) [25]. In fact, a decrease in size gate causes more variation of canal resistance, hence, an increase in 1/f noise.…”

Section: Influence Of Channel Sizementioning

confidence: 89%

“…In fact, a decrease in size gate causes more variation of canal resistance, hence, an increase in 1/f noise. This is justified by the fact that the influence of the access resistances appears especially in strong inversion when the channel resistance decreases [25]- [27].…”

Section: Influence Of Channel Sizementioning

confidence: 99%

Modeling and Analysis of Low Frequency Noise in Ion-Field-Effect Transistors Sensors

Chermiti¹,

Azzouzi²,

Ali³

et al. 2014

MNSMS

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Ions Sensitive Field Effect Transistors (ISFETs) are becoming the platform sensors for important chemical and biomedical applications. However, the accuracy of ISFET output measurement is greatly affected by the presences of low-frequency noise, drift and slow response of the device. This requires more safety in measured results and the tools of analysis. In this paper, we present fundamental limits on the sensitivity of ISFETs micro-sensors, arising from intrinsic and extrinsic noise sources. We developed an algorithm in MATLAB in order to model the frequency analysis of the 1/f noise in ISFET sensor using Hooge theory. We have shown that the 1/f noise of the ISFETs sensors is due to both the electrochemical system (pH solution) and the MOS component (canal size, insulator thickness). The temperature effect on the ISFET noise and the signal conditioning are also performed.

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Low frequency noise in GaN metal semiconductor and metal oxide semiconductor field effect transistors

Cited by 49 publications

References 20 publications

Reduction of 1/f noise in graphene after electron-beam irradiation

Reduction of 1/f noise in graphene after electron-beam irradiation

Low-frequency noise properties of double channel AlGaN/GaN HEMTs

Modeling and Analysis of Low Frequency Noise in Ion-Field-Effect Transistors Sensors

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