Low-frequency noise in GaAs and InP Schottky diodes

Sato, Keno; Chan, C.W.; Najita, K.; DeLisio, M.P.; Chung, Yoonyoung; Cowles, J.; Grossman, P.C.; Lai, R.; Oki, A.K.; Streit, D.C.; Wang, H.

doi:10.1109/mwsym.1998.700706

Cited by 11 publications

(13 citation statements)

References 6 publications

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“…According to (12), no down-conversion of PHN is expected when a phase-noisy RF tone is applied to a quadratic nonlinearity. In (20) phase modulation and quadratic nonlinearity means that the fifth-order term would cancel the addition of the third-and fourth-order terms (21).…”

Section: A) Pseudo-analytical Proceduresmentioning

confidence: 99%

“…According to (12), down-converted PHN in an ideal quadratic detector should be null. To verify this, an ideal quadratic nonlinearity (a 0 ¼ a 1 ¼ 0 in (7)) was used as an ideal reference simulation workbench.…”

Section: D) Pm Sideband Conversion: Transfer Function Obtained For Anmentioning

confidence: 99%

“…Some of the main contributors to LF noise in Schottky diodes are [11]: Flicker noise: related to generation-recombination in surface states [12]. It is described by (1), where I is the dc current and the other parameters are device dependent (a f ,…”

Section: Introductionmentioning

confidence: 99%

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Noise conversion of Schottky diodes in mm-wave detectors under different nonlinear regimes: modeling and simulation versus measurement

Gutiérrez

Zeljami

Villa

et al. 2015

Int. J. Microw. Wireless Technol.

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Noise conversion of Schottky diodes in mm-wave detectors under different nonlinear regimes: modeling and simulation versus measurement je ' ssica gutie ' rrez, kaoutar zeljami, enrique villa, beatriz aja, maria luisa de la fuente, sergio sancho and juan pablo pascual This paper presents and discusses several methods for predicting the low-frequency (LF) noise at the output of a mm-wave detector. These methods are based on the extraction of LF noise source parameters from the single diode under a specific set of bias conditions and the transfer or conversion of these noise sources, under different operating conditions including cyclostationary regime, to the quasi-dc output of a mm-wave detector constructed with the same model of diode. The noise analysis is based on a conversion-matrix type formulation, which relates the carrier noisy sidebands of the input signal with the detector output spectrum through a pair of transfer functions obtained in commercial software. Measurements of detectors in individual and differential setups will be presented and compared with predictions. I . I N T R O D U C T I O NThe low-frequency (LF) noise at the output of a detector may contribute to increasing system instability, becoming a source of error, for example in the operation of radiometers. Particularly, to establish appropriate switching frequencies in switched radiometer systems, it is especially relevant to know the knee frequency of devices [1]. The presence of a switching frequency in these systems transforms the noise analysis into a cyclostationary problem. Moreover, the system's knee frequency may vary depending on the operation mode of the devices. Rigorous mathematical treatment of several types of deterministic and random signals flowing through a nonlinearity is a classic topic [2], which should be reconsidered as simulation tools evolve and the requirements of systems become stricter. On the other hand, in general, apart from phase noise (PHN) in oscillators, simulation tool studies have paid limited attention to LF noise. Therefore, it is considered of great interest to have an accurate characterization of devices' LF noise together with reliable simulation tools for predicting its conversion to the system output, depending on the device operation regimes.The relevance of the device operation regime is shown in [3], which provides empirical evidence of the shot noise deviation with respect to the conventional model in a large-signal pumped Schottky diode, proposing an alternative model based, not on the mean current of the device, but on the smallsignal resistance, supported by a classic reference [4] and in agreement with the distinction between shot noise with constant and with time-varying rate presented in [5]. In [6], the simulation of cyclostationary noise is treated from a physically-based point of view. In [7], the use of time-domain and transient-envelope tools is proposed for the simulation of switching radiometer systems handling noisy broadband signals. Nevertheless, the frequency domain is usuall...

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Section: A) Pseudo-analytical Proceduresmentioning

confidence: 99%

Section: D) Pm Sideband Conversion: Transfer Function Obtained For Anmentioning

confidence: 99%

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Noise conversion of Schottky diodes in mm-wave detectors under different nonlinear regimes: modeling and simulation versus measurement

Gutiérrez

Zeljami

Villa

et al. 2015

Int. J. Microw. Wireless Technol.

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“…Noise voltage can be estimated using differential resistance at 0 V. For SBD THz detector with square spiral antenna and anode diameter of 2 m, noise voltage spectral density is estimated as 15 nV/(Hz) 1/2 . At low frequency, flicker noise is a major source of noise and can be written as 2 = ⁄ where I is the bias current and f is the frequency [36,37], , and are device dependent constants that must be determined experimentally. To avoid high 1/f noise of the SBD at lower frequency, we will modulate THz emitter at higher frequency.…”

Section: Schottky Barrier Diode Thz Detectorsmentioning

confidence: 99%

Portable terahertz scanner for imaging and spectroscopy using InP-related devices

et al. 2015

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Our recent studies in regards of developing portable THz scanner for imaging and spectroscopy systems are presented. In the course, high power tunable continuous wave (CW) THz emitter and high sensitivity THz receiver platforms are presented. Those platforms can be realized with tunable optical beating source, broadband photomixer, arrayed photomixer and Schottky barrier diode, evanescently-coupled photodiodes with high saturation current, and semiconductor optical amplifier (SOA) integrated optical beating source. On the system level, our recent THz thickness measurement systems and the THz line scanner imaging system are presented.

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“…It is the first room temperature device which (1) has low impedance without applied bias, (2) has high RF power to dc voltage responsivity, (3) is insensitive to ambient temperature variation, and (4) is inexpensive to reliably produce in large quantities. W-band Schottky diodes require applied bias and have 1 noise with a power law dependence on the bias [3], [4]. The gain required by the RF low noise pre-amplifier (LNA) to boost the incoming thermal noise signal above the detector noise is correspondingly high.…”

Section: Introductionmentioning

confidence: 99%

1$/f$ Noise of Sb-Heterostructure Diodes for Pre-Amplified Detection

Schulman

Hsu

Moyer

et al. 2007

IEEE Microw. Wireless Compon. Lett.

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The 1 noise of a series of Sb-heterostructure diodes with varying area has been measured. Standard power law formulas for the frequency and voltage dependence were found adequate to summarize the data. An inverse dependence of voltage noise spectral density on the area was determined, consistent with the simple resistor model. Simulations using the noise formula predict that pre-amplification gain in the 30 to 35 db range can produce a sub-1 K noise equivalent temperature difference in realistic imaging cameras.Index Terms-Millimeter wave detectors, millimeter wave imaging, semiconductor device noise, tunnel diodes.

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Low-frequency noise in GaAs and InP Schottky diodes

Cited by 11 publications

References 6 publications

Noise conversion of Schottky diodes in mm-wave detectors under different nonlinear regimes: modeling and simulation versus measurement

Noise conversion of Schottky diodes in mm-wave detectors under different nonlinear regimes: modeling and simulation versus measurement

Portable terahertz scanner for imaging and spectroscopy using InP-related devices

1$/f$ Noise of Sb-Heterostructure Diodes for Pre-Amplified Detection

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