Abstract:In this work, we analyze a resistive switching random access memory (RRAM) device with the metal–insulator–metal structure of Al/αTiOx/Al. The transport mechanism of our RRAM device is trap-controlled space-charge limited conduction, which does not change during the endurance test. As the number of resistive switching (RS) cycles increases, the current in the low-resistance state (LRS) does not change significantly. In contrast, degradation in the high-resistance state (HRS) is noticeably evident. According to… Show more
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