2011 21st International Conference on Noise and Fluctuations 2011
DOI: 10.1109/icnf.2011.5994272
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Low Frequency Noise as a tool to study degradation processes in 4H-SiC p-n junctions

Abstract: Studies of forward current stress on the low frequency noise in the 4H-SiC high voltage rectifier p + -n diodes revealed that (a) noise is a more sensitive indicator of degradation than I-V characteristics, (b) noise could actually decrease with degradation, and (c) degradation mechanism might be linked to stacking faults.

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