Bismuth vanadate
(BiVO4) is an important semiconductor
with wide applications, but in-depth understanding of its fundamental
dynamic behaviors is still lacking. To address this issue, the comprehensive
analysis of structure, internal friction (IF), modulus, dielectric,
and impedance spectra was employed to unambiguously disclose the dynamic
mechanical and electric behaviors for a series of Bi1–x
La
x
VO4 ceramics
(0 ≤ x ≤ 0.15). In sensitive mechanical
measurement, five IF peaks, corresponding modulus anomalies and high-temperature
creep behavior, have been observed in our Bi1–x
La
x
VO4 ceramics.
Through analyzing their related kinetic parameters, defect formations
and evolution processes, the complex evolution model of ferroelastic
domains including four different stages, and the origin of grain boundary
relaxation are well established. As for the electric experiment, there
are two apparently different activation processes in low and high
temperature regions, respectively. In conjunction with structural
and mechanical characterizations, we confirm that the mixed electric/oxide
ionic conduction dominates from 433 to 633 K, undergoing a structural
change (633–673 K) to the complicated defect conduction at
higher temperatures (673–833 K). Our findings smooth the path
for better realization of the fundamental dynamic behaviors as well
as extending practical applications of BiVO4-based materials.