Low-frequency dielectric relaxation and ac conduction of SrBi2Ta2O9 thin film grown by pulsed laser deposition

Kim, Ill Won; Ahn, Chang Won; Kim, Jin-Soo; Song, Tae Kwon; Bae, Jong-Sung; Choi, Byung Chun; Jeong, Jung-Hyun; Lee, Jae‐Shin

doi:10.1063/1.1482138

Cited by 86 publications

(31 citation statements)

References 19 publications

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“…This is due to the high mobility of oxygen vacancies in bismuth-layered perovskites, where they can move easily by an applied electric field resulting in a little space charge effect at low temperatures. Where as at high temperatures, more oxygen defects are activated and they are accumulated at the electrode interfaces and grain boundaries, thus resulting in a strong space-charge relaxation [12,13].…”

Section: Resultsmentioning

confidence: 99%

Impedance spectroscopy of Na and Nd doped strontium bismuth titanate

Rizwana¹,

Krishna²,

James

et al. 2007

Cryst. Res. Technol.

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Sr 0.2 Na 0.4 Nd 0.4 Bi 4 Ti 4 O 15 is prepared by Sol-Gel route using the modified polymeric precursor method based on the Pechini process and its electrical properties are investigated by Complex Impedance Spectroscopy (CIS). Results are presented in two ways, complex plane plots (real versus imaginary) and spectroscopic plots (real and imaginary against frequency). CIS has provided convincing evidence for the existence of both grain (bulk) and grain-boundary effects that were separated in the frequency domain of the impedance spectrum. Experimental data are fitted to two parallel RC equivalent circuits in series. The values of resistance and capacitance of bulk and grain boundary contributions are also calculated. Relaxation times are calculated for both grains and grainboundaries. Conduction and charge carrier behaviors are studied from frequency and temperature dependence of ac conductivity. The ac conductivity follows a two-power law behavior at different temperatures with frequency exponents s 1 and s 2 .

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Section: Resultsmentioning

confidence: 99%

Impedance spectroscopy of Na and Nd doped strontium bismuth titanate

Rizwana¹,

Krishna²,

James

et al. 2007

Cryst. Res. Technol.

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“…Currently, isotropic perovskite ferroelectrics Pb(Zr,Ti)O 3 (PZT) and Bi-layer structured ferroelectrics (BLSFs), SrBi 2 Nb 2 O 9 (SBN), BiTi 3 O 12 (BIT) and SrBi 2 Ta 2 O 9 (SBT), are known as useful ferroelectric materials [5][6][7][8][9][10][11][12]. For practical ferroelectric random access memory (FRAM) application, it is necessary to develop a new ferroelectric material with a high remanent polarization, high fatigue endurance, low leakage current polarization, low leakage current and low processing temperature [5-8, 13, 14].…”

Section: Introductionmentioning

confidence: 99%

Barium Strontium Bismuth Niobate Layered Perovskites: Dielectric, Impedance and Electrical Modulus Characteristics

et al. 2011

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SrBi 2 Nb 2 O 9 (SBN) is a bismuth layered perovskite compound, due to its relatively high Curie temperature, has potential application as high ceramic transducer. Also, it is an attractive ferroelectric material that is being considered in non-volatile random access memory cells. Present article describes preparation, dielectric, impedance and modulus characteristics. Temperature and frequency dependence of dielectric permittivity, impedance and electric modulus of barium strontium bismuth niobate (Ba 0.1 Sr 0.9 Bi 2 Nb 2 O 9 , BSBN) have been studied in the range of 35-590• C and 45 Hz-5 MHz, respectively. The structural analysis of compound revealed orthorhombic at room temperature. Complex impedance Cole-Cole plots are used to interpret the relaxation mechanism. These plots shows the relaxation behavior as non-Debye type. By using the Cole-Cole plots grain and grain boundary contributions towards conductivity have been estimated. From electrical modulus formalism polarization and conductivity relaxation behavior in BSBN have been discussed. DC and AC conductivity measurements have been performed on BSBN.

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“…However, the BIT is known to suffer from high leakage current, which leads to polarization fatigue and small remanent polarization. For practical FRAM applications, it is still necessary to develop new ferroelectric materials with an high remanent polarization and a low electrical conductivity [1][2][3][4][5][6][7][8][9]. Recently, the effect of ion doping on the ferroelectric and electrical properties in BLSFs was widely studied for the improvement of ferroelectric properties [1][2][3][4][5][9][10][11][12][13][14][15][16].…”

Section: Introductionmentioning

confidence: 99%

“…It is necessary to have high remanent polarization, high fatigue endurance, low leakage current and low processing temperature [1][2][3][4][5][6]. Bi-layer structured ferroelectrics (BLSFs) such as SrBi 2 Nb 2 O 9 (SBN), Bi 4 Ti 3 O 12 (BIT) and SrBi 2 Ta 2 O 9 (SBT) are known as a ferroelectric material [7][8][9][10][11][12][13][14].…”

Section: Introductionmentioning

confidence: 99%

Control of the ferroelectric and electrical properties of Nd substituted bismuth titanate ceramics

Lee

Ahn

et al. 2007

J Electroceram

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Nd-doped bismuth titanate Bi 4−x Nd x Ti 3 O 12 ceramics were prepared by a solid state reaction method. The effects of Nd doping on ferroelectric and electrical properties were investigated. With Nd substitution for Bi ion, a BNdT single-phase with Bi-layered perovskite was confirmed. The Nd doping decreased the dissipation factor (tanδ) and the dc conductivity, and increased the dielectric constant and the remanent polarization. A small Nd doping on Bi 4 Ti 3 O 12 leads to a higher remanent polarization and improves the ferroelectric properties.

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Low-frequency dielectric relaxation and ac conduction of SrBi2Ta2O9 thin film grown by pulsed laser deposition

Abstract: Articles you may be interested inDielectric characterization in a broad frequency and temperature range of Sr Bi 2 Nb 2 O 9 thin films grown on Pt electrodes

Cited by 86 publications

References 19 publications

Impedance spectroscopy of Na and Nd doped strontium bismuth titanate

Impedance spectroscopy of Na and Nd doped strontium bismuth titanate

Barium Strontium Bismuth Niobate Layered Perovskites: Dielectric, Impedance and Electrical Modulus Characteristics

Control of the ferroelectric and electrical properties of Nd substituted bismuth titanate ceramics

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