2008
DOI: 10.1103/physrevb.78.245322
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Low-field quantum Hall transport in an electron Fabry-Perot interferometer: Dependence of constriction filling on front-gate voltage

Abstract: We report systematic quantum Hall transport experiments on Fabry-Perot electron interferometers at ultralow temperatures. The GaAs/AlGaAs heterostructure devices consist of two constrictions defined by etch trenches in the two-dimensional electron layer, enclosing an approximately circular island. Front gates deposited in etch trenches allow one to change the constriction filling, relative to the bulk. A systematic variation of the front-gate voltage affects the constriction and the island electron density, wh… Show more

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Cited by 3 publications
(5 citation statements)
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“…28 The aperiodic peaks or dips in Fig. 1, spaced by ~0.03 T, are attributed to disorder-assisted tunneling outside the constrictions; similar ubiquitous mesoscopic fluctuations are also seen in the same device at lower magnetic fields 27 and in quantum antidots. That the aperiodic peaks originate outside of the island is evidenced by their different response to front gates of the left and right constrictions.…”
mentioning
confidence: 70%
See 1 more Smart Citation
“…28 The aperiodic peaks or dips in Fig. 1, spaced by ~0.03 T, are attributed to disorder-assisted tunneling outside the constrictions; similar ubiquitous mesoscopic fluctuations are also seen in the same device at lower magnetic fields 27 and in quantum antidots. That the aperiodic peaks originate outside of the island is evidenced by their different response to front gates of the left and right constrictions.…”
mentioning
confidence: 70%
“…1, was described previously. 26,27 The etch trenches define two 1.2 m-wide constrictions, which separate an approximately circular electron island from the 2D bulk. Tunneling occurs in the two constrictions, thus forming a Fabry-Perot interferometer.…”
mentioning
confidence: 99%
“…1͑a͔͒ ͑Ref. 15,16,20 The results reported here suggest that, by an accurate choice of the working point, the latter devices could be easily used as OR and XOR gates. 1͑d͒.…”
Section: -5mentioning
confidence: 77%
“…This allows to determine the saddle point density from the R XX ͑B͒ and R XY ͑B͒ magnetotransport; a systematic study of quantum Hall transport and analysis were reported for a similar sample in Ref. 41. The local Landau level filling = hn / eB is proportional to the local electron density n; accordingly the constriction C is lower than the bulk B in a given B.…”
Section: Resultsmentioning
confidence: 95%
“…This allows to determine the saddle point density from the ) (B R XX and ) (B R XY magnetotransport; a systematic study of quantum Hall transport and analysis were reported for a similar sample in Ref. 41 . In this device, the island center density is estimated to be close to the bulk B n at 0 FG V , the constriction -island center density difference is ~20%.…”
Section: Resultsmentioning
confidence: 99%