Low-field electron mobility evaluation in silicon nanowire transistors using an extended hydrodynamic model

Abstract

Silicon nanowires (SiNWs) are quasi-one-dimensional structures in which electrons are spatially confined in two directions and they are free to move in the orthogonal direction. The subband decomposition and the electrostatic force field are obtained by solving the Schrödinger-Poisson coupled system. The electron transport along the free direction can be tackled using a hydrodynamic model, formulated by taking the moments of the multisubband Boltzmann equation. We shall introduce an extended hydrodynamic model where closure relations for the fluxes and production terms have been obtained by means of the Maximum Entropy Principle of Extended Thermodynamics, and in which the main scattering mechanisms such as those with phonons and surface roughness have been considered. By using this model, the low-field mobility of a Gate-All-Around SiNW transistor has been evaluated.

Wigner ensemble Monte Carlo simulation without splitting error of a GaAs resonant tunneling diode

“…The results are compared with the corresponding splitting algorithm, showing an excellent agreement as well as a low-cost computational effort. Future research will develop this MC methodology for the simulation of realistic devices, such as silicon nanowires according to the guidelines in [14,15] and new emerging materials such as graphene [8,10].…”

Wigner Ensemble Monte Carlo Simulation Without Discretization Error of a GaAs Resonant Tunneling Diode

“…The results are compared with the corresponding splitting algo, showing an excellent agreement as well as a low-cost computational effort. Future researchers will develop this MC methodology for the simulation of realistic devices, such as silicon nanowires according to the guidelines in [10,11].…”

Wigner Monte Carlo simulation without discretization error of the tunneling rectangular barrier

“…The results are compared with the corresponding analytic solution for the Schrödinger equation, showing an excellent agreement as well as a low-cost computational effort. Future researchers will develop this MC methodology for the simulation of realistic devices, such as silicon nanowires according to the guidelines in [21][22][23][24][25].…”