Low field DC investigation of hot carrier trapping in silicon dioxide films

SiO2Layer Charge State Variation in Fowler-Nordheim Tunneling Regime

“…ű) Nonavalanche dc injection of hot electrons from the Si substrate into the SiO2 layer (ΝΙHE) technique [14] for intentional trap charging by SHEL This technique was used between some field stresses to check the influence of additional substantial electron injection at low electric field (1 MV/cm) on the oxide charge state. The values of injected charge density [Qinj]SHE have been measured and are given in the inset of Fig.…”

“…The variations of charge state of the SiO2 layer, i.e. the area density of charge created in the oxide ΔQ t after each applied electric field step and/or electron injection can be determined from the voltage shift of the current-voltage characteristics using the formula [14]:…”

Electric Field Stimulated Emission of Electrons from Deep Traps in SiO2

“…Trap filling was performed by nonavalanche injection of hot electrons into SiO2 conduction band [3] with the fluence of 2.5 x 10 18 e/cm2 (sufficient for charging of deep traps with small capture cross sections: 10 -18-10 -19 cm2 ) at low oxide electric field, 1 MV/cm, and injection current density 2.0 μ A / c m 2 , i n order to avoid the generation of new traps. The oxide electric field during electron tunnel emission was increased in 0.1 MV/cm steps and maintained constant for τ = 300 s at each Step.…”

“…The oxide electric field during electron tunnel emission was increased in 0.1 MV/cm steps and maintained constant for τ = 300 s at each Step. At the end of each step the drain-source current versus gate-source voltage, Ids(Usg), characteristic was measured, and from the voltage shift of this characteristic the density of trapped charge Qt remaining in oxide traps after each electron emission step via tunneling was determined [3]. The assumed value of the trapped charge centroid was a half of the oxide thickness, which corresponds to the uniform trapping model.…”

On Trap Generation in SiO2Films of Si MOSFETS by Hot Electrons

“…The measurement method was based upon the idea of nonavalanche injection of hot electrons into silicon dioxide conduction band [4]. Electron trapping by native (as fabricated) and generated traps in SiO2 films has been studied by monitoring the charging of the traps during injection of electrons into the film.…”