2010
DOI: 10.1016/j.mee.2009.11.124
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Low energy Xe+ ion beam machining of ULE® substrates for EUVL projection optics – Evaluation of high-spatial frequency roughness

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Cited by 8 publications
(3 citation statements)
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“…Present IBF technology development is focusing on figuring process and the surface finish qualities, such as the surface roughness after figuring [5][6], how to obtain small size ion beam [6][7] and correct mid-frequency [7]. Besides, how to develop this deterministic technology for high slope surfaces is also the key problem to be solved, since this kind of components are playing more and more important roles in modern optical system, where the surface accuracy is required very high and becomes the critical factor responsible for system performances.…”
Section: Introductionmentioning
confidence: 99%
“…Present IBF technology development is focusing on figuring process and the surface finish qualities, such as the surface roughness after figuring [5][6], how to obtain small size ion beam [6][7] and correct mid-frequency [7]. Besides, how to develop this deterministic technology for high slope surfaces is also the key problem to be solved, since this kind of components are playing more and more important roles in modern optical system, where the surface accuracy is required very high and becomes the critical factor responsible for system performances.…”
Section: Introductionmentioning
confidence: 99%
“…[19][20][21][22] In the case of the ULE Ò surface, the 0.2-10.0 keV Xe þ ion beam energy used to machine the substrate is lower than that for the Ar þ ion beam. [23][24][25] When a high energy (3.0-10.0 keV) Xe þ ion beam is used for figure error correction of the ULE Ò substrate, the HSFR at a machined depth of 50 nm (this value is greater than the figure error after mechanical polishing) becomes 0.18 nm rms. Moreover, the HSFR of the ULE Ò substrate machined by a Xe þ ion beam with energy below 0.7 keV at a machined depth of less than 50 nm become less than 0.08 nm rms.…”
Section: Introductionmentioning
confidence: 99%
“…Moreover, the HSFR of the ULE Ò substrate machined by a Xe þ ion beam with energy below 0.7 keV at a machined depth of less than 50 nm become less than 0.08 nm rms. 25) When the high energy (3.0-10 keV) ion beam is used for figure error correction, the substrates becomes rough. Therefore, we consider the figure error correction process with a combination of (1) a figuring process and (2) a smoothing process, and have proposed a low energy (0.2-3.0 keV) smoothing process to improve surface roughness by using a Xe þ ion beam as shown Fig.…”
Section: Introductionmentioning
confidence: 99%