Low-energy ion-assisted control of interfacial structures in metallic multilayers

Quan, Junjie; Zhou, Xiao Wang; Wadley, H.N.G.

doi:10.1016/j.jcrysgro.2007.01.010

Cited by 7 publications

(1 citation statement)

References 48 publications

(78 reference statements)

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“…This mixing can be caused by high energy Ar impacts. [41][42][43][44] Simulations discussed above show that in the absence of Ar assistance, little mixing occurs during growth of Cu on Ta. It is not clear if mixing can occur during growth of Ta on Cu.…”

Section: Growth Of Cu X Ta 1−x On Cumentioning

confidence: 98%

Atomic assembly of Cu/Ta multilayers: Surface roughness, grain structure, misfit dislocations, and amorphization

Francis¹,

Neurock²,

Zhou³

et al. 2008

Journal of Applied Physics

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Molecular dynamics simulations and selected experiments have been carried out to study the growth of Cu films on ͑010͒ bcc Ta and the deposition of Cu x Ta 1−x alloy films on ͑111͒ fcc Cu. They indicate that fcc Cu films with a ͑111͒ texture are always formed when Cu is deposited on Ta surfaces. These films are polycrystalline even when the Ta substrate is single crystalline. The grains have one of two different orientations and are separated by either orientational or misfit dislocations. Periodic misfit dislocations and stacking faults develop within these grains to release structure difference induced misfit strain energy. The Cu film surface roughness was found to decrease with increase in the adatom energy for deposition. When Cu x Ta 1−x is deposited on Ta, the films always have a higher Cu composition than that of the vapor mixture. This arises from a surface segregation phenomenon. When the Cu and Ta fractions in the films are comparable, amorphous structures form. The fundamental origins for the segregation and amorphization phenomena are discussed.

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Section: Growth Of Cu X Ta 1−x On Cumentioning

confidence: 98%