Low driving voltage spatial light modulator fabricated by ultrahigh-purity GaAs

Abstract

Highly efficient surface normal spatial light modulators (SLMs) using ultrahigh purity GaAs layers (30 μm thick) grown on (100) -oriented n + -GaAs substrate by liquid phase epitaxy (LPE) method have been realized. The extinction ratio of 25 dB has been demonstrated with a low -driving voltage (32 V) at 895 nm, based on electroabsorption (EA) effect. Very large depletion length over 150 μm is confirmed by analyzing the extinction ratio and capacitance-voltage (C-V) measurements. The calculated value of impurity concentration is low (≈10 12 cm -3 ) and indicates donor and accepter in the device are highly compensated.