Low‐Driving‐Voltage Electroluminescence in Perovskite Films

Takashima, Hiroshi; Shimada, Kazuhiro; Miura, N.; Katsumata, Tetsuhiro; Inaguma, Yoshiyuki; Ueda, Kazushige; Itoh, Makoto

doi:10.1002/adma.200900524

Cited by 101 publications

(60 citation statements)

References 34 publications

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“…We notice that in order to achieve such a bright luminescence in doped ferroelectric films, the required film thickness is usually 3-10 times larger. [24][25][26] The obtained spectrum of PL emission contains a strong narrow line at approximately 2 eV (wavelength 610 nm) in the Pr-doped film ( Figure 5(a)), closely resembling that at 620 nm in the Pr-doped NNO crystal. 9 Thus, also similar to the crystal, the red PL in the film can be ascribed to radiative transitions between the 1 D 2 excited state and the 3 H 4 ground state of Pr 3þ ions.…”

mentioning

confidence: 73%

Effects of doping and epitaxy on optical behavior of NaNbO3 films

Kocourek

Inkinen

Pacherová

et al. 2015

Applied Physics Letters

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Cube-on-cube epitaxy of perovskite sub-cell of Pr-doped and undoped NaNbO3 is obtained in 130-nm-thick films on top of (La0.18Sr0.82)(Al0.59Ta0.41)O3 (001) substrates. Experimental studies show that the edge of optical absorption red-shifts and some interband transitions change in the films compared to crystals. Bright red luminescence is achieved at room-temperature under ultraviolet excitation in the Pr-doped film. An interband mechanism of luminescence excitation is detected in the film, which is in contrast to the intervalence charge transfer mechanism in the crystal. The results are discussed in terms of epitaxially induced changes of crystal symmetry and ferroelectric polarization in the films. It is suggested that the band structure and interband transitions in NaNbO3 and the transition probabilities in the Pr ions can be significantly modified by these changes.

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mentioning

confidence: 73%

Effects of doping and epitaxy on optical behavior of NaNbO3 films

Kocourek

Inkinen

Pacherová

et al. 2015

Applied Physics Letters

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“…[1][2][3][4][5] In EL devices, light generation in light-emitting diodes (LEDs) is mostly investigated for fl at-panel display and light sources due to their high brightness, long lives, and low power consumption. [6][7][8][9] It is well-known that the LED is essentially a p-n junction diode typically made from a semiconductor.…”

Section: Doi: 101002/adma201104584mentioning

confidence: 99%

Piezo‐Phototronic Effect‐Induced Dual‐Mode Light and Ultrasound Emissions from ZnS:Mn/PMN–PT Thin‐Film Structures

et al. 2012

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Electric-field-controllable luminescence of a ZnS:Mn/PMN-PT system is demonstrated. The light-emission of ZnS:Mn is caused by the piezoelectric potential, resulting from the converse piezoelectric effect of the PMN-PT substrate. Simultaneous generation of light and ultrasound waves is observed in this single system, which offers great potential to develop a dual-modal source combing light and ultrasonic waves for various applications.

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“…The recent discovery of strong electroluminescence under low working voltage in Pr 3 + -doped (Ca, Sr)TiO 3 films further proved the promising applications of such materials in lighting and flat-panel-display technology [4].…”

Section: Introductionmentioning

confidence: 99%