Low-dimensional SiC nanostructures: Fabrication, luminescence, and electrical properties

Synthesis of .BETA.-SiC/SiO2 core-shell nanowires by simple thermal evaporation

“…Extensive studies on SiC nanostructures began in the mid-1990s. 10) To date, SiC nanowires have been fabricated by several methods, mainly based on vapor-liquid-solid (VLS) growth mechanism with assistance of metal catalysts (Fe, Ni, Al, etc.) and vapor-solid (VS) growth mechanism.…”

Effect of Heating Duration on the Synthesis of Silicon Carbide Nanotubes by Microwave Heating of MWCNTs and Silica

“…This shows that SiCNTs were successfully synthesized from the heating duration of 20, 40 and 60 min. The energy band gap of the SiCNTs was obviously blue-shifted compared to energy band gap of the bulk SiC which is 2.39 eV due to the quantum confinement effect (Fan et al 2006). This result is also in good agreement with the value of energy band gap reported by Chen et al (2010) in which they reported that strong and sharp PL emission peak corresponding to SiC nanowire was present at 470 nm and associated with energy band gap of 2.64 eV.…”

Ultra-Fast Microwave Heating for Large Bandgap Semiconductor Processing

“…The 1D and quasi-1D nanowires of Si, GaN, ZnO, SiC and other semiconductors have been synthesized (Huang and Lieber, 2004;Law et al, 2004;Andrievski, 2009;Fang et al, 2010). Silicon carbide, due to its wide bandgap, high electric breakdown field, mechanical hardness, and chemical inertness, offers exciting opportunities in fabricating nanoelectronic devices for chemical/biochemical sensing, for high-temperature, for high-frequency and for aggressive environment applications (Fan et al, 2006). Several techniques have been applied to synthesize SiC nanowires using physical evaporation, chemical vapor deposition, laser ablation, and various other techniques (Sundaresan et al, 2007c).…”