Low-dimensional materials-based field-effect transistors

Wang, F. F.; Hu, Xiaoyong; Niu, Xinxiang; Xie, Jingya; Chu, Shijin; Gong, Qihuang

doi:10.1039/c7tc04819j

Cited by 26 publications

(15 citation statements)

References 98 publications

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“…The recent upsurge on the study of low‐dimensional materials can be linked to their facile property manipulation and processability . These features make them attractive for device fabrication.…”

Section: Methodsmentioning

confidence: 99%

Facile Exfoliation of Single‐Crystalline Copper Alkylphosphates to Single‐Layer Nanosheets and Enhanced Supercapacitance

et al. 2019

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Manipulation of low‐dimensional solids through soft chemical routes is an elegant way to realize newer materials. A new family of single‐crystalline transition‐metal layered organophosphates, with about 185 000 metal phosphate layers in a single crystal, can be exfoliated to a single‐layer nanosheet by a facile and rapid solvent assisted method. This exfoliation aids the formation of high‐surface‐area pyrophosphates with enhanced supercapacitance.

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Section: Methodsmentioning

confidence: 99%

Facile Exfoliation of Single‐Crystalline Copper Alkylphosphates to Single‐Layer Nanosheets and Enhanced Supercapacitance

et al. 2019

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“…The successful isolation of graphene in 2004 has brought a novel class of materials, the so-called two-dimensional (2D) materials, into the limelight. [1][2][3][4][5] Owing to quantum confinement in one direction, the properties of 2D materials are much different from those of their bulk. 6 This led to the early speculation of using 2D materials as a potential alternative to Si in electronics at sub-10 nm dimensions.…”

Section: Introductionmentioning

confidence: 99%

Recent progress in contact, mobility, and encapsulation engineering of InSe and GaSe

Arora

Erbe

2020

InfoMat

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The field of two-dimensional (2D) materials has stimulated considerable interest in the scientific community. Owing to quantum confinement in one direction, intriguing properties have been reported in 2D materials that cannot be observed in their bulk form. The advent of semiconducting 2D materials with a broad range of electronic properties has provided fascinating opportunities to design and configure next-generation electronics. One such emerging class is the family of III-VI monochalcogenides, the two prominent members of which are indium selenide (InSe) and gallium selenide (GaSe). In contrast to transition metal dichalcogenides, their high intrinsic mobility and the availability of a direct bandgap at small thicknesses have attracted researchers to investigate the underlying physical phenomena as well as their technological applications. However, the sensitivity of InSe and GaSe to environmental influences has limited their exploitation in functional devices. The lack of methods for their scalable synthesis further hinders the realization of their devices. This review article outlines recent advancements in the synthesis and understanding of the charge transport properties of InSe and GaSe for their integration into technological applications. A detailed summary of the improvements in the device structure by optimizing extrinsic factors such as bottom substrates, metal contacts, and device fabrication schemes is provided. Furthermore, various encapsulation techniques that have been proven effective in preventing the degradation of InSe and GaSe layers under ambient conditions are thoroughly discussed. Finally, this article presents an outlook on future research ventures with respect to ongoing developments and practical viability of these materials.

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“…By discussing their generalities and differences in sensing mechanism and device construction, it may give an insight in the research of TMDC FET sensors in water contaminants detection. (3)(4)(5)(6)(7)(8)(9). Reprinted with permission from Ref.…”

Section: Detection Of Ionsmentioning

confidence: 99%

“…5b). The testing results showed a linear shift (59 mV/ pH) over a wide pH range (3)(4)(5)(6)(7)(8)(9), as seen in Fig. 5c [81].…”

Section: Detection Of Ionsmentioning

confidence: 99%

Environmental Analysis with 2D Transition-Metal Dichalcogenide-Based Field-Effect Transistors

2020

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• Recent advances of two-dimensional (2D) transition-metal dichalcogenide (TMDC)-based field-effect transistor (FET) sensors for environmental analysis are summarized. • Representative TMDC FET sensors in gaseous and aqueous media analysis are introduced. • Challenges and future research directions of 2D TMDC FET sensors are discussed. ABSTRACT Field-effect transistors (FETs) present highly sensitive, rapid, and in situ detection capability in chemical and biological analysis. Recently, two-dimensional (2D) transition-metal dichalcogenides (TMDCs) attract significant attention as FET channel due to their unique structures and outstanding properties. With the booming of studies on TMDC FETs, we aim to give a timely review on TMDCbased FET sensors for environmental analysis in different media. First, theoretical basics on TMDC and FET sensor are introduced. Then, recent advances of TMDC FET sensor for pollutant detection in gaseous and aqueous media are, respectively, discussed. At last, future perspectives and challenges in practical application and commercialization are given for TMDC FET sensors. This article provides an overview on TMDC sensors for a wide variety of analytes with an emphasize on the increasing demand of advanced sensing technologies in environmental analysis.

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Low-dimensional materials-based field-effect transistors

Abstract: The review article summarizes the research on low-dimensional materials-based field-effect transistors, which will help in device downscaling.

Cited by 26 publications

References 98 publications

Facile Exfoliation of Single‐Crystalline Copper Alkylphosphates to Single‐Layer Nanosheets and Enhanced Supercapacitance

Facile Exfoliation of Single‐Crystalline Copper Alkylphosphates to Single‐Layer Nanosheets and Enhanced Supercapacitance

Recent progress in contact, mobility, and encapsulation engineering of InSe and GaSe

Environmental Analysis with 2D Transition-Metal Dichalcogenide-Based Field-Effect Transistors

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