Low dielectric constant films prepared by plasma-enhanced chemical vapor deposition from trimethylsilane

Deposition of Thin Films of SiOxCyH in a Surfatron Microwave Plasma Reactor with Hexamethyldisiloxane as Precursor

“…In all cases, the deposition rate was rather high, in general similar to that obtained in other deposition experiments using more conventional plasma set-ups. [18] As reported in Figure 3, the lowest value (380 nm min ±1 ) was found when no oxygen was added to the mixture. The highest value was found for oxygen:HMDSO flow ratios of the order of 0.75.…”

“…In general, this rate is similar to that of other reactors, based on more conventional principles, reported in the literature. [18] Characterization of plasmas discharges of Ar in this experimental set-up has shown that the electron density achieved under the working conditions used for deposition is very high, of the order of 2±510 11 cm…”

Thin plasma-polymerized layers of hexamethyldisiloxane for humidity sensor development

“…Furthermore, in terms of miniaturization in electronic circuits, thin film sensors are the more desirable candidates [10]. The use of plasma polymerized films as an insulation and coating for microelectronic devices is widely appreciated [11,12], however, they are not commonly used for the fabrication of absorbing layers. Based on previous investigations on electrical properties of plasma films deposited from hexamethyldisiloxane (HMDSO) [13,14] and the ability of these layers to absorb water vapor and hence changing their dielectric properties, gave rise to investigate the use of these films as sensing layer for humidity sensor development [15,16].…”

Influence of substrate temperature on the properties of fluorinated silicon-nitride thin films deposited by IC-RPECVD

“…For example, the fabrication of a-Si:H TFTs on flexible plastic substrates for large-area imagers and displays requires preparation of silicon-nitride gate dielectrics at temperatures low enough to avoid thermal deformation and/or melting of the substrates. 9 In modern ultralarge-scale integrated (ULSI) circuit technology, where device dimensions continue to shrink, 10 preparation of silicon nitride gate dielectrics at low temperatures is necessary to avoid interdiffusion of elements between adjacent layers or components of the circuit. Use of copper for interconnections in modern deep submicron integrated circuits also requires low-temperature deposition processes to avoid degradation or failure of the copper metallization, which may even occur at 200°C.…”