Low Dielectric Constant 3MS α-SiC:H as Cu Diffusion Barrier Layer   in Cu Dual Damascene Process

Lee, Soon Geun; Kim, Yun Jun; Lee, Seung Pae; Oh, Hyun Seok; Lee, Seung-Jae; Kim, Min; Kim, Il-Goo; Kim, Jae-Hak; Shin, Hong-Jae; Hong, Jin-Gi; Lee, Hyeon-Deok; Kang, Hyunbum

doi:10.1143/jjap.40.2663

Cited by 50 publications

(12 citation statements)

References 3 publications

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“…It is used, e.g., as a wear-resistant material, as a heterogeneous catalyst, and in the production of semiconductors. There, SiC layers are deposited as low-k copper diffusion barriers by the application of organic precursors in plasma processes [1–2], and preventing the formation of SiC nanoparticles as a defect source is a challenge in this established industrial process. But, SiC nanoparticles also exhibit properties different from the bulk material and allow the creation of composite materials with new properties.…”

Section: Introductionmentioning

confidence: 99%

Formation of SiC nanoparticles in an atmospheric microwave plasma

Vennekamp

Bauer²,

Groh³

et al. 2011

Beilstein J. Nanotechnol.

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SummaryWe describe the formation of SiC nanopowder using an atmospheric argon microwave plasma with tetramethylsilane (TMS) as precursor. The impact of several process conditions on the particle size of the product is experimentally investigated. Particles with sizes ranging from 7 nm to about 20 nm according to BET and XRD measurements are produced. The dependency of the particle size on the process parameters is evaluated statistically and explained with growth-rate equations derived from the theory of Ostwald ripening. The results show that the particle size is mainly influenced by the concentration of the precursor material in the plasma.

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Section: Introductionmentioning

confidence: 99%

Formation of SiC nanoparticles in an atmospheric microwave plasma

Vennekamp

Bauer²,

Groh³

et al. 2011

Beilstein J. Nanotechnol.

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“…[41][42][43] The low-k DB/CCL/ES materials implemented to date have been primarily carbon doped silicon nitrides (a-SiNC:H) with k values of 4.5-5.8, [44][45][46][47][48][49][50][51] dense oxygen doped silicon carbides (a-SiCO:H) with k values of 4.0-4.8, [52][53][54][55][56][57][58] and pure silicon carbides (a-SiC:H) with k values of 4.0-7.0. [59][60][61][62][63][64][65][66] Similar to low-k ILDs, these materials have proven equally difficult and challenging to integrate with Cu interconnect fabrication processes. 67,68 However unlike low-k ILDs, the challenges associated with low-k DB/CCL/ES materials have been related to both integration with downstream fabrication processes and meeting numerous additional integrated functionality requirements.…”

mentioning

confidence: 99%

Dielectric Barrier, Etch Stop, and Metal Capping Materials for State of the Art and beyond Metal Interconnects

King

2014

ECS J. Solid State Sci. Technol.

131

115

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Over the past decade, the primary focus for improving the performance of nano-electronic metal interconnect structures has been to reduce the impact of resistance-capacitance (RC) delays via utilizing insulating dielectrics with ever lower values of dielectric permittivity. The integration and implementation of such low dielectric constant (i.e. low-k) materials has been fraught with numerous challenges. For intermetal and interlayer (ILD) low-k dielectrics, these challenges have been largely associated to integration with metal interconnect fabrication processes and well documented and reviewed in the literature. Although equally important, less attention has been given to other low-k dielectrics utilized in metal interconnect structures that are commonly referred to as low-k dielectric barriers (DB), etch stops (ES), and/or Cu capping layers (CCL). These materials present numerous challenges as well for integration into metal interconnect fabrication processes. However, they also have more stringent integrated functionality requirements relative to low-k ILD materials that serve only a basic purpose of electrically isolating adjacent metal lines. In this article, we review the integration challenges and associated integrated functionality requirements for low-k DB/ES/CCL materials with a focus on the current status and future direction needed for these materials to facilitate both Moore's law (i.e. More Moore) and More than Moore scaling.

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“…For flash energies above 40 and 47 J/cm² for Si0.63C0. 37 all energies. The evaluation of Si and SiC grain sizes from GIXRD spectra acquired at different sample orientations shows that an increase in Si(111) peak intensity at a given orientation is correlated with an increase in Si NC diameter in that particular direction.…”

Section: Fla Energymentioning

confidence: 96%

Formation of silicon nanocrystals in silicon carbide using flash lamp annealing

Weiss

Schnabel

Prucnal

et al. 2016

Journal of Applied Physics

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During the formation of Si nanocrystals (Si NC) in SixC1−x layers via solid-phase crystallization, the unintended formation of nanocrystalline SiC reduces the minority carrier lifetime and therefore the performance of SixC1−x as an absorber layer in solar cells. A significant reduction in the annealing time may suppress the crystallization of the SiC matrix while maintaining the formation of Si NC. In this study, we investigated the crystallization of stoichiometric SiC and Si-rich SiC using conventional rapid thermal annealing (RTA) and nonequilibrium millisecond range flash lamp annealing (FLA). The investigated SixC1−x films were prepared by plasma-enhanced chemical vapor deposition and annealed at temperatures from 700 °C to 1100 °C for RTA and at flash energies between 34 J/cm2 and 62 J/cm2 for FLA. Grazing incidence X-ray diffraction and Fourier transformed infrared spectroscopy were conducted to investigate hydrogen effusion, Si and SiC NC growth, and SiC crystallinity. Both the Si content and the choice of the annealing process affect the crystallization behavior. It is shown that under certain conditions, FLA can be successfully utilized for the formation of Si NC in a SiC matrix, which closely resembles Si NC in a SiC matrix achieved by RTA. The samples must have excess Si, and the flash energy should not exceed 40 J/cm2 and 47 J/cm2 for Si0.63C0.37 and Si0.77C0.23 samples, respectively. Under these conditions, FLA succeeds in producing Si NC of a given size in less crystalline SiC than RTA does. This result is discussed in terms of nucleation and crystal growth using classical crystallization theory. For FLA and RTA samples, an opposite relationship between NC size and Si content was observed and attributed either to the dependence of H effusion on Si content or to the optical absorption properties of the materials, which also depend on the Si content

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Low Dielectric Constant 3MS α-SiC:H as Cu Diffusion Barrier Layer in Cu Dual Damascene Process

Cited by 50 publications

References 3 publications

Formation of SiC nanoparticles in an atmospheric microwave plasma

Formation of SiC nanoparticles in an atmospheric microwave plasma

Dielectric Barrier, Etch Stop, and Metal Capping Materials for State of the Art and beyond Metal Interconnects

Formation of silicon nanocrystals in silicon carbide using flash lamp annealing

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