Low defect large area semi‐polar (112) GaN grown on patterned (113) silicon

Pristovsek, Markus; Han, Yisong; Zhu, Tongtong; Frentrup, Martin; Kappers, Menno J.; Humphreys, C. J.; Kozlowski, Grzegorz; Maaskant, Pleun; Corbett, Brian

doi:10.1002/pssb.201451591

Cited by 17 publications

(8 citation statements)

References 24 publications

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“…It is entirely suppressed for patterned substrates with BSF densities below 500 cm

^{- 1}

(cf. ()), and similar for patterned (

10 \overset{1}{true} 2

) sapphire where BSFs are below 1000 cm

^{- 1}

. This is better seen in the bottom graph of Fig.…”

Section: Resultssupporting

confidence: 72%

“…Top shows an RSM map from the (

20 \overset{2}{true} 1

) to (

20 \overset{2}{true} 4

) reflection in the (

11 \overset{2}{true} 0

) plane of a sample with AlN nucleation but no ILs. Bottom shows the extracted intensity of the (

20 \overset{2}{true} 1

) peak along the streak in [0001] for three different samples with comparable

ω

FWHM, black on patterned (113) Si () (BSF 500 cm

^{- 1}

), using ELOG () (BSF

10^{3} - 10^{4}

^{- 1}

), and for AlN nucleation with ILs (BSF low

10^{5}

^{- 1}

).…”

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Optimizing GaN () hetero‐epitaxial templates grown on () sapphire

Pristovsek

Frentrup

Han

et al. 2015

Physica Status Solidi (b)

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The hetero‐epitaxy of (11true2‾2) GaN on (10true1‾0) sapphire was optimized in metal–organic vapor phase epitaxy. Best results were obtained from an AlN nucleation followed by AlN and AlGaN layers, and inserting low‐temperature AlN interlayers (ILs) as well as a SiNx IL. X‐ray diffraction (XRD) of ω scans of the symmetric (11true2‾2) reflection yielded an ω FWHM <450″ along [11true2‾true3‾] and <900″ along [10true1‾0] together with a 100×100thinmathspaceμm2 rms roughness below 10 nm as determined by atomic force microscopy. The lowest threading dislocation density achieved was ≈109cm−2 while the basal plane stacking fault density was in the lower 105cm−1 range as determined by transmission electron microscopy. The suppression of the unwanted (10true1‾true3‾) phase was lower than 1 in 10,000 as judged from XRD.

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“…It is entirely suppressed for patterned substrates with BSF densities below 500 cm

^{- 1}

(cf. ()), and similar for patterned (

10 \overset{1}{true} 2

) sapphire where BSFs are below 1000 cm

^{- 1}

. This is better seen in the bottom graph of Fig.…”

Section: Resultssupporting

confidence: 72%

“…Top shows an RSM map from the (

20 \overset{2}{true} 1

) to (

20 \overset{2}{true} 4

) reflection in the (

11 \overset{2}{true} 0

) plane of a sample with AlN nucleation but no ILs. Bottom shows the extracted intensity of the (

20 \overset{2}{true} 1

) peak along the streak in [0001] for three different samples with comparable

ω

FWHM, black on patterned (113) Si () (BSF 500 cm

^{- 1}

), using ELOG () (BSF

10^{3} - 10^{4}

^{- 1}

), and for AlN nucleation with ILs (BSF low

10^{5}

^{- 1}

).…”

Section: Resultsmentioning

confidence: 99%

Optimizing GaN () hetero‐epitaxial templates grown on () sapphire

Pristovsek

Frentrup

Han

et al. 2015

Physica Status Solidi (b)

Self Cite

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“…The photoluminescence spectra of the GaN/AlN/SiC/NP‐Si(100) structure measured at 77 K (Figure ) contain several peaks with the energies hν = 3.46, 3.26, and 3.18 eV. The highest energy peak with the FWHM of about 50 meV can be assigned to the exciton bound to neutral donor, while the other peaks are related to recombination associated with basal‐plane stacking faults ( hν = 3.40 eV) and donor‐acceptor recombination ( hν = 3.26 and 3.18 eV) . The peak hν = 3.18 eV energetically matches to reported values of the с ‐GaN phase…”

Section: Resultsmentioning

confidence: 99%

Semipolar GaN(10–11) Epitaxial Layer Prepared on Nano‐Patterned SiC/Si(100) Template

Бессолов

Zubkova

Konenkova

et al. 2018

Physica Status Solidi (b)

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A new approach is proposed to the synthesis of a semipolar GaN on a Si(100) substrate at the surface of which the V-shaped nanostructures with the characteristic size of elements as low as 100 nm are formed. It has been demonstrated that application of buffer layers of 3C-SiC and AlN enables formation of the GaN(10-11) layer characterized by the full width at half maximum value as low as ω θ 45 arcmin for the X-ray diffraction rocking curve. The model based on anisotropic nucleation of AlN on the V-shaped nanostructure is proposed to explain the growth of the GaN layer in a single semipolar direction.

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“…12 For samples grown using epitaxial lateral overgrowth (ELOG) methods, where a patterned substrate or template is used, there is an additional effect causing the chevrons to appear more pronounced. 13 This arises from the differing growth rates along the c-and a-growth directions, which results in irregularities during their coalescence. 8 The chevrons are undesirable, due to disruption of the crystal structure, and methods have been investigated to reduce their formation.…”

Section: Introductionmentioning

confidence: 99%

Cathodoluminescence studies of chevron features in semi-polar (112¯2) InGaN/GaN multiple quantum well structures

Brasser

Bruckbauer

Gong

et al. 2018

Journal of Applied Physics

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This version is available at https://strathprints.strath.ac.uk/63662/ Strathprints is designed to allow users to access the research output of the University of Strathclyde. Unless otherwise explicitly stated on the manuscript, Copyright © and Moral Rights for the papers on this site are retained by the individual authors and/or other copyright owners. Please check the manuscript for details of any other licences that may have been applied. You may not engage in further distribution of the material for any profitmaking activities or any commercial gain. You may freely distribute both the url (https://strathprints.strath.ac.uk/) and the content of this paper for research or private study, educational, or not-for-profit purposes without prior permission or charge.Any correspondence concerning this service should be sent to the Strathprints administrator: strathprints@strath.ac.ukThe Strathprints institutional repository (https://strathprints.strath.ac.uk) is a digital archive of University of Strathclyde research outputs. It has been developed to disseminate open access research outputs, expose data about those outputs, and enable the management and persistent access to Strathclyde's intellectual output. Epitaxial overgrowth of semi-polar III-nitride layers and devices often leads to arrowhead-shaped surface features, referred to as chevrons. We report on a study into the optical, structural, and electrical properties of these features occurring in two very different semi-polar structures, a blueemitting multiple quantum well structure, and an amber-emitting light-emitting diode. Cathodoluminescence (CL) hyperspectral imaging has highlighted shifts in their emission energy, occurring in the region of the chevron. These variations are due to different semi-polar planes introduced in the chevron arms resulting in a lack of uniformity in the InN incorporation across samples, and the disruption of the structure which could cause a narrowing of the quantum wells (QWs) in this region. Atomic force microscopy has revealed that chevrons can penetrate over 150 nm into the sample and quench light emission from the active layers. The dominance of non-radiative recombination in the chevron region was exposed by simultaneous measurement of CL and the electron beam-induced current. Overall, these results provide an overview of the nature and impact of chevrons on the luminescence of semi-polar devices.

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Low defect large area semi‐polar (112) GaN grown on patterned (113) silicon

Cited by 17 publications

References 24 publications

Optimizing GaN () hetero‐epitaxial templates grown on () sapphire

Optimizing GaN () hetero‐epitaxial templates grown on () sapphire

Semipolar GaN(10–11) Epitaxial Layer Prepared on Nano‐Patterned SiC/Si(100) Template

Cathodoluminescence studies of chevron features in semi-polar (112¯2) InGaN/GaN multiple quantum well structures

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