Low-defect EUVL multilayers on standard format mask blanks

Folta, James A.; Kearney, Patrick A.; Larson, Cindy; Crosley, M.; Fisch, Emily; Racette, Kenneth C.

doi:10.1117/12.467478

Cited by 5 publications

(4 citation statements)

References 3 publications

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“…7 In the case of EUV multilayers, the target industry specification is zero particle defects of size 25nm or greater. For DUV photomask coatings, specifications in practice are more relaxed but nonetheless challenging.…”

Section: Deposition Tool Overviewmentioning

confidence: 99%

Initial results of new photomask-blank deposition tool

et al. 2003

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In a joint-development, Rohwedder and Osmic have designed and built a low-defect dual-ion beam reactive-sputtering tool. The tool has been specifically targeted for developing low-defect lithography mask photoblank coatings intended as DUV absorbers and phase-shifting films. The Osmic / Rohwedder collaboration will continue into NGL -the present tool also serves as an R&D platform for EUVL mask blanks. The deposition tool and robotic substrate handler have been integrated and delivered to Osmic in the 2 nd quarter of 2003. In this paper, we present initial capability for production of thin-film lithography coatings, including spectrophotometric performance, defect levels and film uniformity. Future reports will share results from more in-depth process development and optimization.

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Section: Deposition Tool Overviewmentioning

confidence: 99%

Initial results of new photomask-blank deposition tool

et al. 2003

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“…Besides thermal behavior, defectivity, flatness and surface roughness of LTEM substrates, the properties of mask blank coatings determine the feasibility of EUV mask blank production. In addition defect level reduction became one of the most relevant challenges to take up [3]. This goal requires efforts from substrate production to coating deposition and obviously includes cleaning techniques.…”

Section: Introductionmentioning

confidence: 99%

EUVL mask blanks: Recent results on substrates, multilayers and the dry-etch process of TaN-absorbers

et al. 2006

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Continuous reduction of feature size in semiconductor industry and manufacturing integrated circuits at low costs requires new and innovative technology to overcome existing limitations of optics. Tremendous progress in key areas like EUVL light source technology and manufacturing technology of EUVL masks with low defect rates have been made recently and EUVL is the leading technology capable to be extended so Moore's law, the shrinkage of IC critical features, can continue to be valid. SCHOTT Lithotec has introduced all relevant technology steps to manufacture EUV mask blanks -ranging from Low Thermal Expansion Material (LTEM) with high quality substrate polishing to low defect blank manufacturing. New polishing and cleaning technologies, improved sputter technology and updated metrology enable us to routinely produce EUVL mask blanks meeting already many of the roadmap requirements. Further R&D is ongoing to path the way to the production of EUV blanks which meet all requirements.An important focus of this paper is to present the recent results on LTEM substrates, which include defect density, roughness and flatness simultaneously, as well as EUVL multilayer properties such as defect density, optical properties like reflectivity and uniformity in the EUV range and optical resistance to cleaning steps. In addition the design of EUVL absorber material will be discussed, including optical performance at EUV wavelength and its contrast behavior.Finally, IMS Chips has developed the dry etch process of these EUV Mask Blanks by optimizing etch selectivities, profiles and etch bias. Results on CD uniformity, linearity and iso/dense bias will be presented.

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“…While LTEM substrate surface qualities become a critical goal, coatings must lead to high throughput mask processing and high optical response uniformity. On the other hand, defect level reduction becomes one of the most relevant challenges to take up [3]. This goal requires efforts from substrate production to coating deposition and obviously cleaning techniques.…”

Section: Introductionmentioning

confidence: 99%

Production of low-thermal-expansion EUVL mask blanks with low-defect multilayer, buffer, and absorber

et al. 2004

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Schott Lithotec has introduced all relevant technology steps to manufacture EUV mask blanks -ranging from Low Thermal Expansion Material (LTEM) via high quality substrate polishing to low defect blank manufacturing. New polishing and cleaning technologies, improved sputter technology and updated metrology enable us to routinely produce EUVL mask blanks meeting already many of the roadmap requirements. The goal is pilot production of EUV blanks for the 45 nm node end of 2005. There are several technology options for achieving the mechanical, optical and chemical specs for substrates and coatings. Some of them are already integrated in our processes. An important focus of this paper is the understanding of defect sources starting from the LTEM bulk material to the fully coated blanks with multilayer, buffer and absorber. We present details on some production steps controlling defect detection sensitivity dedicated to various layers and report on new results on defect reduction research after the different process steps.

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Low-defect EUVL multilayers on standard format mask blanks

Cited by 5 publications

References 3 publications

Initial results of new photomask-blank deposition tool

Initial results of new photomask-blank deposition tool

EUVL mask blanks: Recent results on substrates, multilayers and the dry-etch process of TaN-absorbers

Production of low-thermal-expansion EUVL mask blanks with low-defect multilayer, buffer, and absorber

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