Low dark current InGaAs detector arrays for night vision and astronomy

MacDougal, M.H.; Geske, J.; Wang, Chad; Liao, Shirong; Getty, J.T.; Holmes, A.

doi:10.1117/12.820377

Cited by 31 publications

(19 citation statements)

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“…The numerical calculation yields D Ã ¼ 1 Â 10 13 cm ffiffiffiffiffiffi Hz p W À1 for k ¼ 1:55 lm, a value close to that of today's best devices. [7][8][9] This is the maximum detectivity we can typically achieve with our structure. To go further and achieve still better performances, growth conditions will have to be improved, in order to reduce traps and determine another tradeoff with a thinner active region.…”

Section: Active Region Thicknessmentioning

confidence: 95%

“…With this geometry, we would expect to reduce the dark current by at least one order of magnitude compared with the state of the art of InGaAs photodiodes. [7][8][9] Being the simplest material in this system, InP is a good candidate as the wide bandgap material in these heterojunctions. Unfortunately, it has two major drawbacks for InGaAs/InP stacks grown by MOVPE.…”

Section: -9mentioning

confidence: 99%

“…6 Despite the outstanding performances achieved by today's InGaAs detectors, there have been few advances in recent years. [7][8][9] SWIR InGaAs photodiodes can be seen as a model for the development of the fourth generation of infrared detectors.…”

mentioning

confidence: 99%

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Dark current investigation in thin P-i-N InGaAs photodiodes for nano-resonators

Verdun

Beaudoin

Portier

et al. 2016

Journal of Applied Physics

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We investigated the dark current components of thin planar InGaAs photodiodes grown by metalorganic vapor-phase epitaxy for optical nano-resonators. Owing to their high electric field enhancement, nano-resonators make it possible to substantially reduce the thickness of the active region to about 100 nm all the while maintaining high quantum efficiency. In the present study, to cover a broad spectral band, we combined several resonance peaks induced by guided-mode resonances in a given spectral range. This type of geometry allowed us to introduce InAlAs at the edge of a thin InGaAs active region in order to drastically reduce both the diffusion current and the generation/recombination current. We found that, in such devices, tunneling dark current components increase as the thickness of the active layer is reduced and dominate the reverse dark current. By optimizing the epitaxial stack, while keeping its total thickness constant (the optical properties of the nano-resonator remained unchanged), we showed that we are already able to achieve a specific detectivity of up to 1×1013 cmHz W−1 for λ=1.55 μm.

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Section: Active Region Thicknessmentioning

confidence: 95%

Section: -9mentioning

confidence: 99%

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Dark current investigation in thin P-i-N InGaAs photodiodes for nano-resonators

Verdun

Beaudoin

Portier

et al. 2016

Journal of Applied Physics

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“…The short wavelength infrared (SWIR) band near 1.0-3.0μm plays an important role in many applications such as weather forecast, earth environmental or resource observation, low light level systems and astronomical observation [1][2] . The photoconductive PbS or PbSe detectors, cryogenically-cooled InSb detectors, HgCdTe detectors and InGaAs detectors are utilized in this SWIR band [3] .…”

Section: Introductionmentioning

confidence: 99%

Extended wavelength InGaAs infrared detector arrays based on three types of material structures grown by MBE

Gong

Xue

et al. 2014

SPIE Proceedings

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Extended wavelength InGaAs infrared detector arrays in 1.0~2.5μm spectral rang based on three types of material structures grown by MBE were studied. The first type InGaAs detectors, marked by sample 1#, were fabricated using Pi-N epitaxial materials, mesa etching technique, side-wall and surface passivating film. The second type InGaAs detectors, marked by sample 2#, were fabricated using N-i-P epitaxial materials, mesa etching technique, side-wall and surface passivating film. The third type InGaAs detectors, marked by sample 3#, were fabricated using n-i-n epitaxial materials, planar diffusion process and surface passivating coating. I-V curves, low frequency noise and response spectra of these detectors were measured at the different temperature. The response spectra of these detectors cover 1.0~2.5μm wavelength range. The dark current density of three types InGaAs detectors are 28nA/cm 2 , 2μA/cm 2 , 9μA/cm 2 at 200K and -10mV bias voltage, respectively. Compared to Sample 2# and Sample 3#, sample 1# presents the lower dark current at the same temperature and the same bias voltage, which mainly results in the improvement of surface passivation film and the depth of mesa etching. The frequency spectrum of the noise of sample 1# has an inflection point at about 10Hz frequency, 1/f noise play an obviously role in the detectors below the 10Hz frequency.

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“…5,6 Short wavelength infrared InGaAs sensor with lattice matched InP substrate has been commonly applied in various field, such as astronomical observation, earth detection and machine vision. [7][8][9] It is exceedingly appealing to broaden the feasibility of wire grid polarizer into infrared spectrum. Metal wire grid grating can be designed to function as polarizer because of the existence surface plasmons (SPs) which consists of surface plasmon polariton (SPP) and localized surface plasmon (LSP).…”

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confidence: 99%

The simulation of localized surface plasmon and surface plasmon polariton in wire grid polarizer integrated on InP substrate for InGaAs sensor

Wang

Shao

et al. 2015

AIP Advances

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We numerically demonstrate the integration of gold wire grid polarizer on InP substrate for InGaAs polarimetric imaging. The effective spectral range of wire grid polarizer has been designed in 0.8-3 μm according to InGaAs response waveband. The dips in TM transmission are observed due to surface plasmon (SPs) significantly damaging polarization performance. To further understand the coupling mechanism between gold wire grid grating and InP, the different contributions of surface plasmon polariton (SPP) and localized surface plasmon (LSP) to the dips are analyzed. Both transmission and reflectance spectra are simulated at different grating periods and duty cycles by finite-different time-domain (FDTD) method. LSP wavelength is located at around 1 μm and sensitive to the specific shape of metal wire. SPP presents higher resonance wavelength closely related to grating period. The simulations of electric field distribution show the same results.

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Low dark current InGaAs detector arrays for night vision and astronomy

Cited by 31 publications

References 0 publications

Dark current investigation in thin P-i-N InGaAs photodiodes for nano-resonators

Dark current investigation in thin P-i-N InGaAs photodiodes for nano-resonators

Extended wavelength InGaAs infrared detector arrays based on three types of material structures grown by MBE

The simulation of localized surface plasmon and surface plasmon polariton in wire grid polarizer integrated on InP substrate for InGaAs sensor

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