Low Dark Current and High Responsivity 1020nm InGaAs/GaAs Nano-Ridge Waveguide Photodetector Monolithically Integrated on a 300-mm Si Wafer

Özdemir, Cenk Ibrahim; Koninck, Yannick De; Yudistira, Didit; Kuznetsova, Nadezda; Baryshnikova, Marina; Thourhout, Dries Van; Kunert, Bernardette; Pantouvaki, Marianna; Campenhout, Joris Van

doi:10.1109/jlt.2021.3084324

Cited by 24 publications

(22 citation statements)

References 21 publications

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“…[ 11–13 ] To obtain lower dark currents, researchers have explored novel integration techniques using quantum wells/dashes/dots for absorption layers to take advantages of 2D or 3D carrier confinement. [ 28–31 ] Although such approaches may lead to the ultralow dark currents down to the tens of pA level (≈10 −6 –10 −8 A cm −2 ), the demonstrated device bandwidths have been mostly limited to less than 10 GHz (see Figure S2 and the Supporting Information text for more details).…”

Section: Resultsmentioning

confidence: 99%

High‐Bandwidth InGaAs Photodetectors Heterogeneously Integrated on Silicon Waveguides Using Optofluidic Assembly

Jung

Bae

Kwon

et al. 2021

Laser & Photonics Reviews

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Section: Resultsmentioning

confidence: 99%

High‐Bandwidth InGaAs Photodetectors Heterogeneously Integrated on Silicon Waveguides Using Optofluidic Assembly

Jung

Bae

Kwon

et al. 2021

Laser & Photonics Reviews

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“…Figure 14b shows one example of an InGaAs/GaAs nanoridge waveguide PD integrated on Si using a GoVS template, which has a record low dark current density of 1.98 × 10 −5 mA cm −2 . [50] The GoVS substrate can reduce the buffer layer thickness. Recently, Xue et al demonstrated a III-V PD directly grown on a V-grooved Si substrate without using a buffer layer, [169] as shown Figure 14c.…”

Section: Directly Grown Iii-v Photodetectorsmentioning

confidence: 99%

“…Figure 14b shows one example of an InGaAs/GaAs nanoridge waveguide PD integrated on Si using a GoVS template, which has a record low dark current density of

1.98 \times {10^{{\rm{ - }}5}}

mA cm −2 . [ 50 ] The GoVS substrate can reduce the buffer layer thickness. Recently, Xue et al.…”

Section: High‐speed Photodetectorsmentioning

confidence: 99%

“…The second method involves growing a III-V PD onto a GaAson-V-Grooved-Si (GoVS) substrate. [50,154,167,168] The high crystalline quality GoVS substrate is achieved by aspect ratio trapping. In combination with an annealing process and strain balancing layers, a very low dark current can be realized.…”

Section: Directly Grown Iii-v Photodetectorsmentioning

confidence: 99%

“…In the hybrid/heterogeneously integrated III-V PD part, the inset shows a cross-section scanning electron microcopy (XSEM) and schematic image of a nanoridge waveguide PD on Si. Adapted with permission [50]. Copyright 2021, IEEE.…”

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confidence: 99%

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High‐Speed Photodetectors on Silicon Photonics Platform for Optical Interconnect

Chen

Shi

et al. 2022

Laser & Photonics Reviews

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A photodetector (PD) converts optical signals into electrical ones and is widely used in optical interconnect. High-speed PDs are in high demand as they are necessary to meet requirements of large-capacity optical interconnect. Many high-performance PDs with various absorption materials and structures are demonstrated on silicon photonics platform, including germanium (Ge) PDs, germanium tin (GeSn) PDs, heterogeneous integrated III-V PDs, all silicon (Si) PDs, 2D material PDs, etc. These kinds of PDs continue to set new records of speed and open an era of ultrahigh-speed optical interconnect. A comprehensive summary of the state-of-the-art high-speed PDs on silicon photonics platform is necessary and meaningful. In this review, the basic metrics and key process technologies for the PDs are introduced, and various types of high-speed PDs based on silicon photonics platform are reviewed and discussed. Furthermore, the summary and perspectives are provided. It is hoped that this review can provide readers more insights into recent advances in high-speed PDs on silicon photonics platform and contribute to the further development.

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In‐Plane Selective Area Epitaxy of InAsSb Nanowire Networks for High‐Performance Scalable Infrared Photodetectors

Wen,

Liu,

et al. 2024

Advanced Optical Materials

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CMOS‐compatible III–V semiconductor nanowire infrared photodetectors have attracted extensive research interest in various fields such as Si photonics and gas sensors. However, the traditional vertical configuration of nanowires limits their applications at the circuit level. Here, an in‐plane selective area epitaxy route is developed to grow large‐scale InAsSb nanowire networks on patterned Si substrates. By precisely tuning the growth parameters, the well‐aligned InAsSb nanowire networks with good selectivity are successfully achieved. Detailed structural studies confirm that there is a sharp interface between the InAsSb nanowire and the substrate. On the basis of optoelectronic measurements, it is confirmed that the fabricated InAsSb nanowire network photodetectors exhibit a low dark current density (≤2 mA cm−2) and a wide spectral response (1200–1650 nm) at room temperature, covering the important telecommunication bands. Moreover, these devices present a high on‐off ratio, large responsivity, high detectivity, and rapid response speed at zero bias voltage. At the illumination wavelength of 1200 nm, the on‐off ratio, responsivity, detectivity, and response time of a double nanowire networks photodetector can reach 2680, 286.9 mA W−1, 1.4 × 1010 Jones and 75.3 µs, respectively. This work offers a straightforward approach to in situ fabricating high‐performance scalable nanowire photodetectors.

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Low Dark Current and High Responsivity 1020nm InGaAs/GaAs Nano-Ridge Waveguide Photodetector Monolithically Integrated on a 300-mm Si Wafer

Cited by 24 publications

References 21 publications

High‐Bandwidth InGaAs Photodetectors Heterogeneously Integrated on Silicon Waveguides Using Optofluidic Assembly

High‐Bandwidth InGaAs Photodetectors Heterogeneously Integrated on Silicon Waveguides Using Optofluidic Assembly

High‐Speed Photodetectors on Silicon Photonics Platform for Optical Interconnect

In‐Plane Selective Area Epitaxy of InAsSb Nanowire Networks for High‐Performance Scalable Infrared Photodetectors

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