Low-Damage Damascene Patterning Using Porous Inorganic Low-Dielectric-Constant Materials

Yonekura, Kazumasa; Goto, Kazuya; Matsuura, M.; Fujiwara, Nobuo; Tsujimoto, Kazunori

doi:10.1143/jjap.44.2976

Cited by 43 publications

(29 citation statements)

References 5 publications

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“…24,25 The slow progression has been mostly related to the difficulties in integrating these new materials with already established patterning and metallization schemes and is well documented in the literature. [26][27][28][29][30][31][32][33] The conversion to Cu and damascene interconnect fabrication methods, however, required the addition of other insulating dielectric * Electrochemical Society Active Member.…”

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confidence: 99%

Dielectric Barrier, Etch Stop, and Metal Capping Materials for State of the Art and beyond Metal Interconnects

King

2014

ECS J. Solid State Sci. Technol.

131

115

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Over the past decade, the primary focus for improving the performance of nano-electronic metal interconnect structures has been to reduce the impact of resistance-capacitance (RC) delays via utilizing insulating dielectrics with ever lower values of dielectric permittivity. The integration and implementation of such low dielectric constant (i.e. low-k) materials has been fraught with numerous challenges. For intermetal and interlayer (ILD) low-k dielectrics, these challenges have been largely associated to integration with metal interconnect fabrication processes and well documented and reviewed in the literature. Although equally important, less attention has been given to other low-k dielectrics utilized in metal interconnect structures that are commonly referred to as low-k dielectric barriers (DB), etch stops (ES), and/or Cu capping layers (CCL). These materials present numerous challenges as well for integration into metal interconnect fabrication processes. However, they also have more stringent integrated functionality requirements relative to low-k ILD materials that serve only a basic purpose of electrically isolating adjacent metal lines. In this article, we review the integration challenges and associated integrated functionality requirements for low-k DB/ES/CCL materials with a focus on the current status and future direction needed for these materials to facilitate both Moore's law (i.e. More Moore) and More than Moore scaling.

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confidence: 99%

Dielectric Barrier, Etch Stop, and Metal Capping Materials for State of the Art and beyond Metal Interconnects

King

2014

ECS J. Solid State Sci. Technol.

131

115

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“…7. The etching characteristics for SF 6 and Cl 2 gas chemistries were very different. With SF 6 gas, the etching rate was relatively large, but significant side etching also occurred as shown in Fig.…”

Section: Ultimate Nanoscale Etchingmentioning

confidence: 98%

Ultimate Top-down Etching Processes for Future Nanoscale Devices: Advanced Neutral-Beam Etching

Samukawa

2006

jjap

137

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For the past 30 years, plasma etching technology has led in the efforts to shrink the pattern size of ultralarge-scale integrated (ULSI) devices. However, inherent problems in the plasma processes, such as charge buildup and UV photon radiation, limit the etching performance for nanoscale devices. To overcome these problems and fabricate sub-10-nm devices in practice, neutral-beam etching has been proposed. In this paper, I introduce the ultimate etching processes using neutral-beam sources and discuss the fusion of top-down and bottom-up processing for future nanoscale devices. Neutral beams can perform atomically damage-free etching and surface modification of inorganic and organic materials. This technique is a promising candidate for the practical fabrication technology for future nano-devices.

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“…[8][9][10][11][12][13] Surface reactions in the reactive plasma processes have been extremely complex because of interactions between various activated species and radiation from the plasmas. However, the influence of the resistance capacitance delay on device performance has become a major limitation.…”

Section: Introductionmentioning

confidence: 99%

Mechanism of plasma-induced damage to low-k SiOCH films during plasma ashing of organic resists

Takeda

Miyawaki

Takashima³

et al. 2011

Journal of Applied Physics

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Articles you may be interested inEffects of plasma and vacuum-ultraviolet exposure on the mechanical properties of low-k porous organosilicate glass J. Appl. Phys. 116, 044103 (2014); 10.1063/1.4891501Plasma damage effects on low-k porous organosilicate glass Plasma-induced damage to porous SiOCH ͑p-SiOCH͒ films during organic resist film ashing using dual-frequency capacitively coupled O 2 plasmas was investigated using the pallet for plasma evaluation method developed by our group. The damage was characterized by ellipsometry and Fourier-transform infrared spectroscopy. Individual and synergetic damage associated with vacuum ultraviolet ͑VUV͒ and UV radiation, radicals, and ions in the O 2 plasma were clarified. It was found that the damage was caused not only by radicals but also by synergetic reactions of radicals with VUV and UV radiation emitted by the plasmas. It is noteworthy that the damage induced by plasma exposure without ion bombardment was larger than the damage with ion bombardment. These results differed from those obtained using an H 2 / N 2 plasma for resist ashing. Finally, the mechanism of damage to p-SiOCH caused by O 2 and H 2 / N 2 plasma ashing of organic resist films is discussed. These results are very important in understanding the mechanism of plasma-induced damage to p-SiOCH films.

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Low-Damage Damascene Patterning Using Porous Inorganic Low-Dielectric-Constant Materials

Cited by 43 publications

References 5 publications

Dielectric Barrier, Etch Stop, and Metal Capping Materials for State of the Art and beyond Metal Interconnects

Dielectric Barrier, Etch Stop, and Metal Capping Materials for State of the Art and beyond Metal Interconnects

Ultimate Top-down Etching Processes for Future Nanoscale Devices: Advanced Neutral-Beam Etching

Mechanism of plasma-induced damage to low-k SiOCH films during plasma ashing of organic resists

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