Low-Crosstalk and Low-Dark-Current CMOS Image-Sensor Technology Using a Hole-Based Detector

Stevens, Eric G.; Komori, H.; Doan, Hung Q.; Fujita, Hiroaki; Kyan, J.; Parks, C.; Shi, Gang; Tivarus, C.; Jian, Wu

doi:10.1109/isscc.2008.4523056

Cited by 33 publications

(10 citation statements)

References 3 publications

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“…The conventional N-type Metal-Oxide-Semiconductor (NMOS) pixel video is inverted as a result, with the sense node voltage increasing with light level. The advantage of the PMOS or p_Pixel process is in producing imaging arrays with lower dark current than that found in comparable NMOS or n-Pixel processes 4 . Figure 6 shows the Kodak published dark current for the p_Pixel compared to the n_Pixel.…”

Section: Noisementioning

confidence: 99%

NV-CMOS HD camera for day/night imaging

et al. 2014

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SRI International (SRI) has developed a new multi-purpose day/night video camera with low-light imaging performance comparable to an image intensifier, while offering the size, weight, ruggedness, and cost advantages enabled by the use of SRI's NV-CMOS HD digital image sensor chip. The digital video output is ideal for image enhancement, sharing with others through networking, video capture for data analysis, or fusion with thermal cameras. The camera provides Camera Link output with HD/WUXGA resolution of 1920 x 1200 pixels operating at 60 Hz. Windowing to smaller sizes enables operation at higher frame rates. High sensitivity is achieved through use of backside illumination, providing high Quantum Efficiency (QE) across the visible and near infrared (NIR) bands (peak QE >90%), as well as projected low noise (<2h+) readout. Power consumption is minimized in the camera, which operates from a single 5V supply. The NV-CMOS HD camera provides a substantial reduction in size, weight, and power (SWaP) , ideal for SWaP-constrained day/night imaging platforms such as UAVs, ground vehicles, fixed mount surveillance, and may be reconfigured for mobile soldier operations such as night vision goggles and weapon sights. In addition the camera with the NV-CMOS HD imager is suitable for high performance digital cinematography/broadcast systems, biofluorescence/microscopy imaging, day/night security and surveillance, and other high-end applications which require HD video imaging with high sensitivity and wide dynamic range. The camera comes with an array of lens mounts including C-mount and F-mount.

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Section: Noisementioning

confidence: 99%

NV-CMOS HD camera for day/night imaging

et al. 2014

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“…As for the process development, deep p-well around photodiode [17], deep trench isolation (DTI) [18] including frontside-illumination DTI [19], backside-illumination [20] and capacitor DTI [21], air-gap guard ring [22,23,24,25], anti-reflection film coating [26] and buried shield metal [27] are all applied to optimize the crosstalk behavior respectively. PMOS structure [28] also make sense due to its limit in diffusion. Besides, linear deblurring [29] and crosstalk compensation algorithm [30] are adopted to improve image quality.…”

Section: Introductionmentioning

confidence: 99%

A novel method to test and optimize the periphery crosstalk in CMOS image sensor

Liu

Zhang

Shen

2020

IEICE Electron. Express

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For the purpose of reducing the peripheral crosstalk occur in the edge pixel, we illustrated a method to test and quantify the intensity of this crosstalk, and setup a model combining the opposite incident light and color construction. With the aid of the method and model, we conducted many experiments to analyze and compare the improvement measures, finding that the increase of pixel edge to package edge distance, sealing glass thinning and black photoresist coating around edge are all effective to reduce the peripheral crosstalk. Moreover, considering the effect and cost, the sealing glass thinning is the relatively best measure.

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“…Among different noise performance-improving techniques and structures, a p-type pixel has been considered as one of the promising candidate for low-noise CMOS image sensor. Thanks to the combination of a hole-based photo-detector coupled with dedicated pMOS transistors, p-type pixels could present several advantages over their n-type counterparts, including lower dark current, lower cross-talk and improved low frequency noise character [3]. However, compared with nMOS transistors, the use of pMOS as a source follower in p-type pixels suffers from a larger thermal noise due to its lower trans-conductance.…”

Section: Introductionmentioning

confidence: 99%

A comparative noise analysis and measurement for n-type and p-type pixels with CMS technique

Ge¹,

Mamdy²,

Theuwissen³

2016

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This paper presents a noise analysis and noise measurements of n-type and p-type pixels with correlated multiple sampling (CMS) technique. The output noise power spectral density (PSD) of both pixel types with different CMS noise reduction factors have been simulated and calculated in the spectral domain. For validation, two groups of test pixel have been fabricated with a state-of-the-art n-type and p-type CMOS image sensor (CIS) technology. The calculated and the measured noise results with CMS show a good agreement. Measurement results also show that the n-type and p-type pixels reach a 1.1 eand 0.88 h + inputreferred temporal noise respectively with a board-level 64 times digital CMS and ×6 analog gain.

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Low-Crosstalk and Low-Dark-Current CMOS Image-Sensor Technology Using a Hole-Based Detector

Cited by 33 publications

References 3 publications

NV-CMOS HD camera for day/night imaging

NV-CMOS HD camera for day/night imaging

A novel method to test and optimize the periphery crosstalk in CMOS image sensor

A comparative noise analysis and measurement for n-type and p-type pixels with CMS technique

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