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1987
DOI: 10.1016/0379-6787(87)90105-0
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Low cost methods for the production of semiconductor films for CuInSe2/CdS solar cells

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Cited by 136 publications
(49 citation statements)
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“…Alloyed or stacked metal layers are commonly deposited by thermal evaporation, 67 sputtering 68 or electrodeposition. 69,70 The DC-magnetron sputtering technique is well established for the production of large-area solar modules up to 60Â120 cm 2 yielding maximum efficiencies of 13% on 30Â30 cm 2 modules. 71,72 Adhesion problems due to the high volume expansion during the selenization of metallic precursors can be reduced by using metal selenide precursors which additionally reduce interdiffusion of In and Ga. 73,74 A maximum cell efficiency of 17Á5% after annealing has been achieved with an In-Ga-Se/Cu-Se bilayer evaporated on a heated substrate.…”
Section: Selenization Of Precursor Materialsmentioning
confidence: 99%
“…Alloyed or stacked metal layers are commonly deposited by thermal evaporation, 67 sputtering 68 or electrodeposition. 69,70 The DC-magnetron sputtering technique is well established for the production of large-area solar modules up to 60Â120 cm 2 yielding maximum efficiencies of 13% on 30Â30 cm 2 modules. 71,72 Adhesion problems due to the high volume expansion during the selenization of metallic precursors can be reduced by using metal selenide precursors which additionally reduce interdiffusion of In and Ga. 73,74 A maximum cell efficiency of 17Á5% after annealing has been achieved with an In-Ga-Se/Cu-Se bilayer evaporated on a heated substrate.…”
Section: Selenization Of Precursor Materialsmentioning
confidence: 99%
“…The direct electrodeposition provides all the constituents from the same electrolyte in a single step. CIS thin fi lms may also be fabricated by a sequential electroplating process in the fi rst step of which a pure Cu layer is deposited, and, in the second step, precursor fi lms of In -Se, Cu -Se, and Cu -In -Se are deposited using electrodeposition [298,299] . Direct electrodeposition was accomplished in one step from a plating bath containing calculated proportions of CuSO 2 , In 2 (SO 4 ) 3 , and SeSO 3 [299 -316] .…”
Section: Cuinse 2 Fabricationmentioning
confidence: 99%
“…annealed an electrodeposited Cu -In alloy [74] , Kapur et al . annealed stacked Cu -In layers [75] , and Bhattacharya et al . annealed In -Se Cu -Se stacks [28] .…”
Section: Historical Perspectivementioning
confidence: 99%