Loss of phosphorous in silica-phosphate sol-gel films

Anastasescu, Mihai; Gärtner, M.; Ghiţă, Constantin; Predoană, Luminița; Todan, Ligia; Zaharescu, Maria; Vasiliu, Ileana Cristina; Grigorescu, C.E.A.; Negrilǎ, C.

doi:10.1007/s10971-006-8775-y

Cited by 17 publications

(15 citation statements)

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“…This effect is probably due to both reduced P 2 O 5 and reduced water content in the films. These results are in good agreement with our previous ones, where it was confirmed the volatilisation of P from the films based on alkoxides, in the 200-300 °C temperature range [7].…”

supporting

confidence: 93%

“…The amounts of isolated phosphoric acid, i.e. Q°C units and the absorbed water in the gels determine the proton conductivity of the phosphorsilicate gels [5] Our previous investigations on SiO 2 -P 2 O 5 films obtained by sol-gel method using alkoxides and phosphoric acid as P precursors showed a pronounced tendency of the alkoxides to be evaporated from the system [6][7][8][9]. In this paper we report the influence of the chemical and structural changes occurred by using different P-precursors on the electrical properties of the SiO 2 -P 2 O 5 films prepared by sol gel.…”

mentioning

confidence: 99%

“…Thickness and porosity were determined based on spectroscopic ellipsometry (SE) measurements. Details regarding the SE data analysis can be found in our previous papers [6][7][8][9]. The solutions obtained starting with phosphorus alkoxides were kept at room temperature for 24 h before deposition.…”

mentioning

confidence: 99%

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Influence of different phosphorus precursors on the electrical properties of the SiO₂‐P₂O₅ films obtained by sol‐gel

Vasiliu

Vancea

Latia

et al. 2008

Phys. Status Solidi (c)

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This work aims at establishing the influence of different phosphor‐precursors on the electrical properties of 90%SiO2‐10%P2O5 (%mol) thin films prepared by sol‐gel method from triethylphosphate, triethylphosphite and phosphoric acid precursors. Glass and respectively ITO‐coated glass were used as substrates. The films were annealed at 200 °C and respectively 500 °C. For all selected precursors the results show that the conduction in the phosphate glass films decreases with increasing annealing temperature, giving thus evidence of a reduced release‐ and transfer‐activity of protons within the films. The activation energy of the conduction process takes values in the range 0.033‐0.04 eV. The correlation between the electrical properties and optical and structural data is also discussed. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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confidence: 99%

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Influence of different phosphorus precursors on the electrical properties of the SiO₂‐P₂O₅ films obtained by sol‐gel

Vasiliu

Vancea

Latia

et al. 2008

Phys. Status Solidi (c)

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“…1a, b. In comparison with the values of n and k measured for the SiO 2 -P 2 O 5 matrix [18] , the optical absorption and the refractive index values of the actual films are increased ( Fig. 1a) due to the dimensional quantum effect of semiconductor doping particles embedded in the silicophosphate matrix.…”

Section: Spectroscopic Ellipsometrymentioning

confidence: 83%

CdSe/ZnS-doped silicophosphate films prepared by sol–gel method

Elisa

Vasiliu

Feraru

et al. 2015

J Sol-Gel Sci Technol

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Silicate and silicophosphate films doped with CdSe/ZnS quantum dots (QDs) have been deposited on silicon substrate, by sol-gel method, spin-coating technique. A precursor solution (PS) composed of tetraethoxysilane (TEOS) and ethanol (EtOH) has been prepared in the case of silicate films (T) and in the case of silicophosphate films (TPT), the same precursors for T films and triethylphosphate were used. In each PS, dimethylformamide and CdSe/ZnS (QD) were added. Spectroscopic ellipsometry shows that absorption of TPT films in the visible (400-700 nm) decreases over 400 nm, due to dimensional quantum effect of semiconductor doping particles embedded in the silicophosphate matrix. The same manner is noticed in the case of refractive index dependency on wavelength. Raman spectra were recorded by 785 nm excitation and put in evidence specific bands for the inorganic matrix as well as a low-intensity band characteristic for CdSe doping. The morphology of the films was investigated by transmission electron microscopy revealing semiconductor doping dots with average dimension 3.3 nm and a homogeneous distribution of the doping particles in the inorganic matrix. SEM image of the cross-section of the TPT film reveals a thickness of about 500 nm. The fluorescence spectra of CdSe/ZnSdoped films exhibit an emission band at about 530 nm, provided by 350 nm excitation, whose characteristics are close to those of CdSe compound.

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“…A strong evaporation of the P alkoxides was demonstrated, especially when P-alkoxides were used as P precursors, during the thermal treatment of the films in the 200-500°C range. For the film preparation in the P 2 O 5 -SiO 2 system, special care has to be taken in order to retain the P in the film composition [12].…”

Section: Introductionmentioning

confidence: 99%

Investigations on sol–gel process and structural characterization of SiO2-P2O5 powders

Sava

Elisa

Vasiliu

et al. 2012

Journal of Non-Crystalline Solids

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Loss of phosphorous in silica-phosphate sol-gel films

Cited by 17 publications

References 9 publications

Influence of different phosphorus precursors on the electrical properties of the SiO₂‐P₂O₅ films obtained by sol‐gel

Influence of different phosphorus precursors on the electrical properties of the SiO₂‐P₂O₅ films obtained by sol‐gel

CdSe/ZnS-doped silicophosphate films prepared by sol–gel method

Investigations on sol–gel process and structural characterization of SiO2-P2O5 powders

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Loss of phosphorous in silica-phosphate sol-gel films

Cited by 17 publications

References 9 publications

Influence of different phosphorus precursors on the electrical properties of the SiO2‐P2O5 films obtained by sol‐gel

Influence of different phosphorus precursors on the electrical properties of the SiO2‐P2O5 films obtained by sol‐gel

CdSe/ZnS-doped silicophosphate films prepared by sol–gel method

Investigations on sol–gel process and structural characterization of SiO2-P2O5 powders

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Influence of different phosphorus precursors on the electrical properties of the SiO₂‐P₂O₅ films obtained by sol‐gel

Influence of different phosphorus precursors on the electrical properties of the SiO₂‐P₂O₅ films obtained by sol‐gel