Loss of implanted heavy elements during annealing of ultra-shallow ion-implanted silicon: The complete picture

Chan, Taw Kuei; Koh, Stephen; Fang, F.; Markwitz, A.; Osipowicz, T.

doi:10.1016/j.apsusc.2014.06.030

Cited by 4 publications

(4 citation statements)

References 24 publications

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“…72 Out diffusion of Pb in Si has been shown by Chan et al where high temperature annealing with ion beam activates the out diffusion process. 73 Thus, in the present case, under ion beam irradiation, Pb can diffuse which may give rise to a decrease in the grain size (near the buried layer created by ion beam). Consequently, as Pb may diffuse to other defect sites, the overall crystallinity of the sample may degrade.…”

Section: Srim Simulationmentioning

confidence: 71%

Modification of structural and dielectric properties of polycrystalline Gd-doped BFO–PZO

et al. 2018

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[Formula: see text](BiFe[Formula: see text]GdxO3)–y(PbZrO3) composites [Formula: see text], having four different Gd concentrations ([Formula: see text], 0.1, 0.15, and 0.2), were synthesized and their structural, dielectric, and ferroelectric properties have been studied using different characterization techniques. In addition, to investigate the effect of ion implantation on the microstructure and dielectric properties, these composites were exposed to 2[Formula: see text]MeV He[Formula: see text]-ions. Modifications of the structure, surface morphology and electrical properties of the samples before and after ion exposure were demonstrated using powder X-ray diffraction (XRD), scanning electron microscopy (SEM) technique, and LCR meter. The compositional analysis was carried out using energy dispersive X-ray spectrometry (EDS). XRD results demonstrated a decrease in the intensity profile of the dominant peak by a factor of 6 showing a degradation of the crystallinity. Willliamson–Hall (WH) plots reveal reduction in the grain size after irradiation along with an increase in strain and dislocation density. A decrease in the dielectric constant and loss has been recorded after ion beam exposure with reduction in ac conductivity value. The contribution of grain and grain boundary effect in conduction mechanism has been addressed using Nyquist plots. All the samples demonstrate a lossy ferroelectric loop which shows a clear modification upon irradiation. The role of structural defects modifying the physical properties of the composite materials is discussed in this work.

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Section: Srim Simulationmentioning

confidence: 71%

Modification of structural and dielectric properties of polycrystalline Gd-doped BFO–PZO

et al. 2018

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“…[3,4] The technological process, usually adopted such a treatment as combining ultra-low energy ion implantation with rapid-thermal annealing treatment to achieve a well reliable reproducibility and the good control of implanted atoms, dosage and spatial distributions, is extensively used to form shallow junctions of ultra-shallow source/drain junctions (USJ) wafers. [5][6][7] The ion implantation with the precise control of junction depth and doping concentration is closely related to the scaling of source/drain (S/D) junctions. [1,8] Scaled junction processing should simultaneously accomplish two objectives: limiting the diffusion of impurities to maintain the thermal budget, and substantially activating the implantation atoms.…”

Section: Introductionmentioning

confidence: 99%

Differential nonlinear photocarrier radiometry for characterizing ultra-low energy boron implantation in silicon

Lei¹,

Li²,

Sun³

et al. 2022

Chinese Phys. B

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The measuring of the depth profile and electrical activity of implantation impurity in the top nanometer range of silicon encounters various difficulties and limitations, though it is known to be critical in fabrication of silicon complementary metal–oxide–semiconductor (CMOS) devices. In the present work, SRIM program and photocarrier radiometry (PCR) are employed to monitor the boron implantation in industrial-grade silicon in an ultra-low implantation energy range from 0.5 keV to 5 keV. The differential PCR technique, which is improved by greatly shortening the measurement time through the simplification of reference sample, is used to investigate the effects of implantation energy on the frequency behavior of the PCR signal for ultra-shallow junction. The transport parameters and thickness of shallow junction, extracted via multi-parameter fitting the dependence of differential PCR signal on modulation frequency to the corresponding theoretical model, well explain the energy dependence of PCR signal and further quantitatively characterize the recovery degree of structure damage induced by ion implantation and the electrical activation degree of impurities. The monitoring of nm-level thickness and electronic properties exhibits high sensitivity and apparent monotonicity over the industrially relevant implantation energy range. The depth profiles of implantation boron in silicon with the typical electrical damage threshold (Y ED) of 5.3 × 1015 cm−3 are evaluated by the SRIM program, and the determined thickness values are consistent well with those extracted by the differential PCR. It is demonstrated that the SRIM and the PCR are both effective tools to characterize ultra-low energy ion implantation in silicon.

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“…A well reliable reproducibility and control of dopant purity, dosage and spatial distribution for the ultra-shallow doped layers can be achieved by ultralow-energy ion-implantation techniques and fast annealing process 1 – 3 . The main purpose of fast annealing process for the ultra-shallow junction (USJ) device in ULSI technology is to activate the dopant atoms and confine the dopant diffusion region by the fast annealing treatment, such as laser, spike and flash annealing 4 – 6 .…”

Section: Introductionmentioning

confidence: 99%

The chemical states and atomic structure evolution of ultralow-energy high-dose Boron implanted Si(110) via laser annealing

Lee

Kao

et al. 2017

Sci Rep

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Further scale down the dimension of silicon-based integrated circuit is a crucial trend in semiconductor fabrication. One of the most critical issues in the nano-device fabrication is to confirm the atomic structure evolution of the ultrathin shallow junction. In this report, UV Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), X-ray absorption near edge structure (XANES) and reflective second harmonic generation (RSHG) are utilized to monitor the pulse laser induced atomic structure evolution of ultralow-energy high-dose Boron implanted Si(110) at room and cold substrate temperature. A peak feature around 480 cm−1 resolved in UV Raman spectra indicates the formation of Si-B bond after the laser irradiation. The red shift of binding energy of Si element (~99 eV) in XPS and the evolution of absorption peak (~196.2 eV) in XANES reveal that the changes in the chemical states of ultra shallow junction strongly correlate to the activation process of Boron implantation, which is confirmed by RSHG measurement. The substrate temperature effect in the recrystallization of Boron implanted region is also realized by cross-section high-resolution TEM (HRTEM). The phenomena of Si-B bond formation and ultra-shallow junction recrystallization can be traced and applied to improve the reliability of Si ultra shallow junction in the future.

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Loss of implanted heavy elements during annealing of ultra-shallow ion-implanted silicon: The complete picture

Cited by 4 publications

References 24 publications

Modification of structural and dielectric properties of polycrystalline Gd-doped BFO–PZO

Modification of structural and dielectric properties of polycrystalline Gd-doped BFO–PZO

Differential nonlinear photocarrier radiometry for characterizing ultra-low energy boron implantation in silicon

The chemical states and atomic structure evolution of ultralow-energy high-dose Boron implanted Si(110) via laser annealing

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