Loss Analysis of n-Type Passivated Emitter Rear Totally Diffused Back-Junction Silicon Solar Cells with Efficiencies up to 21.2%

Lim, Bianca; Brendemühl, Till; Dullweber, Thorsten; Brendel, Rolf

doi:10.1109/jphotov.2016.2520211

Cited by 11 publications

(8 citation statements)

References 20 publications

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“…The application of the PECVD BSG diffusion source and the co-diffusion process results in an independently confirmed conversion efficiency of 21.0% as published in [12]. The efficiency is almost as high as the 21.2% of the reference n-PERT BJ cells with separate POCl 3 and BBr 3 diffusions [17] despite the simplified process.…”

Section: Bsg/sin Z and Bsg/sio X N Y Passivationsupporting

confidence: 63%

“…n-PERT BJ co-diffused [12] 666 39.1 80.5 21.0 a n-PERT BJ reference [17] 674 39.3 80.0 21.2 a a Independently confirmed by Fraunhofer ISE Cal Lab.…”

Section: Cell Conceptmentioning

confidence: 84%

“…The CoBo model uses the experimentally extracted R sheet and J 0 data from Table 2 and further parameters given in [17] as input parameters. Important parameters are the measured wafer thickness of 151 mm and a wafer resistivity of 5.6 Ω cm.…”

Section: Solar Cell Results and Efficiency Gain Analysismentioning

confidence: 99%

“…1. For comparison, n-PERT BJ reference cells using sequential BBr 3 and POCl 3 diffusions are also fabricated as described in [17].…”

Section: Solar Cell Processingmentioning

confidence: 99%

See 3 more Smart Citations

21.0%-efficient screen-printed n-PERT back-junction silicon solar cell with plasma-deposited boron diffusion source

Wehmeier

Nowack

Lim

et al. 2016

Solar Energy Materials and Solar Cells

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Section: Bsg/sin Z and Bsg/sio X N Y Passivationsupporting

confidence: 63%

“…n-PERT BJ co-diffused [12] 666 39.1 80.5 21.0 a n-PERT BJ reference [17] 674 39.3 80.0 21.2 a a Independently confirmed by Fraunhofer ISE Cal Lab.…”

Section: Cell Conceptmentioning

confidence: 84%

Section: Solar Cell Results and Efficiency Gain Analysismentioning

confidence: 99%

“…1. For comparison, n-PERT BJ reference cells using sequential BBr 3 and POCl 3 diffusions are also fabricated as described in [17].…”

Section: Solar Cell Processingmentioning

confidence: 99%

See 2 more Smart Citations

21.0%-efficient screen-printed n-PERT back-junction silicon solar cell with plasma-deposited boron diffusion source

Wehmeier

Nowack

Lim

et al. 2016

Solar Energy Materials and Solar Cells

Self Cite

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“…Compared with the double‐side doping of the BBr 3 and BCl 3 diffusions, they can strongly simplify the solar cells process flows and thus reduce the production cost of solar cells with boron‐doped layers. Most of them have demonstrated high boron emitter electrical qualities such as spin‐on coating, screen printing, codiffusion from atmospheric pressure chemical vapor deposition (APCVD) of doped layers, and ion implantation . Some of these single‐side doping techniques are already used in high‐efficiency n‐type solar cells …”

Section: Introductionmentioning

confidence: 99%

Plasma‐immersion ion implantation: A path to lower the annealing temperature of implanted boron emitters and simplify PERT solar cell processing

Lanterne

Desrues

Lorfeuvre

et al. 2019

Progress in Photovoltaics

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Ion implantation is a suitable and promising solution for the massive industrialization of boron doping, which is a crucial process step for most next‐generation solar cells based on crystalline silicon (c‐Si). However, the use of ion implantation for boron doping is limited by the high temperature (in the 1050°C range) of the subsequent activation anneal, which is essential to dissolve the boron clusters and reach a high‐emitter quality. In this work, we propose the use of plasma‐immersion ion implantation (PIII) from B2H6 gas precursor instead of the standard beamline ion implantation (BLII) technique to decrease this temperature down to 950°C. PIII and BLII boron emitters were compared with annealing temperatures ranging from 950°C to 1050°C. Contrary to BLII, no degradation of the emitter quality was observed with PIII implants annealed at 950°C along with a full activation of the dopants in the emitter. At 1000°C, emitter saturation current densities (J0e) below 21 fA/cm2 were obtained using the PIII technique regardless of the tested implantation doses for sheet resistances between 110 and 160 Ω/sq. After metallization steps, the metal/emitter contact resistances were assessed, indicating that these emitters were compatible with a conventional metallization by screen‐printing/firing. The PIII boron emitters' performances were further tested with their integration in n‐type passivated emitter rear totally diffused (PERT) solar cells fully doped by PIII. Promising results already show a conversion efficiency of 20.8% using a lower annealing temperature than with BLII and a reduced production cost.

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Charge Carrier Collection and Contact Selectivity in Solar Cells

Rau

Kirchartz

2019

Adv Materials Inter

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The electronic properties of the contacts to a photovoltaic absorber material are important for the final efficiency of any type of solar cell. For highly efficient solar cells based on high quality absorber materials like single‐crystalline silicon, polycrystalline Cu(In,Ga)Se2, CdTe, or metal‐halide perovskites, contact formation is even the decisive processing step determining the final efficiency. The present paper combines recently developed quantitative concepts for the description of contacts to solar cells in terms of their selectivity toward a more general description that is valid for all types of solar cells and all types of contacts. It is shown that the built‐in voltage is an important parameter to influence the selectivity of contacts to photovoltaic absorber materials. It is also shown that the contact selectivity is mathematically related to the collection efficiency which can be measured by luminescence based techniques.

show abstract

Loss Analysis of n-Type Passivated Emitter Rear Totally Diffused Back-Junction Silicon Solar Cells with Efficiencies up to 21.2%

Cited by 11 publications

References 20 publications

21.0%-efficient screen-printed n-PERT back-junction silicon solar cell with plasma-deposited boron diffusion source

21.0%-efficient screen-printed n-PERT back-junction silicon solar cell with plasma-deposited boron diffusion source

Plasma‐immersion ion implantation: A path to lower the annealing temperature of implanted boron emitters and simplify PERT solar cell processing

Charge Carrier Collection and Contact Selectivity in Solar Cells

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