2016
DOI: 10.1109/jphotov.2016.2520211
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Loss Analysis of n-Type Passivated Emitter Rear Totally Diffused Back-Junction Silicon Solar Cells with Efficiencies up to 21.2%

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Cited by 11 publications
(8 citation statements)
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“…The application of the PECVD BSG diffusion source and the co-diffusion process results in an independently confirmed conversion efficiency of 21.0% as published in [12]. The efficiency is almost as high as the 21.2% of the reference n-PERT BJ cells with separate POCl 3 and BBr 3 diffusions [17] despite the simplified process.…”
Section: Bsg/sin Z and Bsg/sio X N Y Passivationsupporting
confidence: 63%
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“…The application of the PECVD BSG diffusion source and the co-diffusion process results in an independently confirmed conversion efficiency of 21.0% as published in [12]. The efficiency is almost as high as the 21.2% of the reference n-PERT BJ cells with separate POCl 3 and BBr 3 diffusions [17] despite the simplified process.…”
Section: Bsg/sin Z and Bsg/sio X N Y Passivationsupporting
confidence: 63%
“…n-PERT BJ co-diffused [12] 666 39.1 80.5 21.0 a n-PERT BJ reference [17] 674 39.3 80.0 21.2 a a Independently confirmed by Fraunhofer ISE Cal Lab.…”
Section: Cell Conceptmentioning
confidence: 84%
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“…Compared with the double‐side doping of the BBr 3 and BCl 3 diffusions, they can strongly simplify the solar cells process flows and thus reduce the production cost of solar cells with boron‐doped layers. Most of them have demonstrated high boron emitter electrical qualities such as spin‐on coating, screen printing, codiffusion from atmospheric pressure chemical vapor deposition (APCVD) of doped layers, and ion implantation . Some of these single‐side doping techniques are already used in high‐efficiency n‐type solar cells …”
Section: Introductionmentioning
confidence: 99%